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Träfflista för sökning "WFRF:(Johansson Lars Erik) ;pers:(Egard Mikael);pers:(Gorji Ghalamestani Sepideh)"

Sökning: WFRF:(Johansson Lars Erik) > Egard Mikael > Gorji Ghalamestani Sepideh

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  • Johansson, Sofia, et al. (författare)
  • High frequency vertical InAs nanowire MOSFETs integrated on Si substrates
  • 2012
  • Ingår i: physica status solidi (c). - Wiley-Blackwell Publishing, Inc. - 1862-6351. ; 9:2, s. 350-353
  • Konferensbidrag (refereegranskat)abstract
    • RF and DC characterization of vertical InAs nanowire MOSFET on Si substrates are presented. Nanowire arrays are epitaxially integrated on Si substrates by use of a thin InAs buffer layer. For device fabrication, high-k HfO2 gate dielectric and wrap-gates are used. Post-deposition annealing of the high-k is evaluated by comparing one annealed and one not-annealed sample. The annealed sample show better DC characteristics in terms of transconductance, g(m) = 155 mS/mm, and on-current, I-on = 550 mA/mm. Box plots of on-current, on-resistance and transconductance for all 190-nanowire-array transistors on the annealed sample suggest that the electrical properties of the nanowires are preserved when scaling the nanowire diameter. Finally, high frequency characterisation yields a unity current gain cut-off frequency of f(t) = 9.3 GHz for the annealed sample and f(t) = 2.0 GHz for the not-annealed sample. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
  • Johansson, Sofia, et al. (författare)
  • RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
  • 2011
  • Ingår i: IEEE Transactions on Microwave Theory and Techniques. - IEEE. - 0018-9480. ; 59:10, s. 2733-2738
  • Tidskriftsartikel (refereegranskat)abstract
    • We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for circuit applications. The FET consists of an array of 182 vertical InAs nanowires with about 6-nm HfO high-gate dielectric and a wrap-gate length of 250 nm. The transistor has a transconductance of 155 mS/mm and an on-current of 550 mA/mm at a gate voltage of 1.5 V and a drain voltage of 1 V. S-parameter measurements yield an extrinsic cutoff frequency of 9.3 GHz and a extrinsic maximum oscillation frequency of 14.3 GHz.
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