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Sökning: WFRF:(Kaczmarczyk M)

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  • Kaniewska, M., et al. (författare)
  • Spatial variarion of hole eigen energies in Ge/Si quantum wells
  • 2011
  • Ingår i: AIP Conference Proceedings. PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors, Seoul, Korea, 25-30 July 2010. - 0094-243X. - 978-073541002-2 ; 1399, s. 293-294
  • Konferensbidrag (refereegranskat)abstract
    • Ge quantum well (QW) structures were prepared through Si-capping of 3.3 ML of Ge by MBE on p +-(001) Si substrates at a growth temperature of 550°C. The spatial variation of hole eigen energies in the QW were revealed by DLTS. Depending on the position on the wafer surface, the hole emission may be imposed by a lateral quantum confinement effect. Results of a study by HRTEM methods demonstrate pronounced fluctuations of the QW thickness and variations of the strain field in the QW.
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  • Kaniewska, M., et al. (författare)
  • Spatial variation of hole eigen energies in Ge/Si quantum wells
  • 2011
  • Ingår i: AIP Conference Proceedings. - 0094243X. - 978-073541002-2 ; 1399, s. 293-294
  • Konferensbidrag (refereegranskat)abstract
    • Ge quantum well (QW) structures were prepared through Si-capping of 3.3 ML of Ge by MBE on p +-(001) Si substrates at a growth temperature of 550°C. The spatial variation of hole eigen energies in the QW were revealed by DLTS. Depending on the position on the wafer surface, the hole emission may be imposed by a lateral quantum confinement effect. Results of a study by HRTEM methods demonstrate pronounced fluctuations of the QW thickness and variations of the strain field in the QW.
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  • Kaczmarczyk, M, et al. (författare)
  • Comprehensive study of InAs/GaAs quantum dots by means of complementary methods
  • 2009
  • Ingår i: Materials Science and Engineering B. 9th International Workshop on Expert Evaluation and Control Compound Semiconductor Materials and Technologies. Univ Lodz, Lodz, POLAND. JUN 01-06, 2008. - 0921-5107. ; 165:1-2
  • Konferensbidrag (refereegranskat)abstract
    • Structural, optical, and electronic properties of self-organized InAs/GaAs quantum dots (QDs) were studied by means of atomic force microscopy (AFM), photoluminescence measurements (PL), and deep level transient spectroscopy (DLTS). We found that a well defined group of QDs with low size dispersion as revealed by AFM maintains its properties in PL spectra even if the QDs are covered by GaAs. Two well separated emission lines attributed to the QD-related ground- and excited-state transitions. respectively are found in the PL spectra. Contrary to the optical picture of a characteristic simplicity, DLTS spectra are found with higher complexity. This is due to combined thermal/tunneling processes and multi-particle emission. Despite the relatively good understanding of optical and electrical properties of QDs in PL and DLTS, respectively, there are still discrepancies between electrical and optical data for the energy of the QD ground states, which need more investigations to be explained.
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