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Sökning: WFRF:(Lu W) > (2000-2004) > Tidskriftsartikel

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1.
  • Arnaudov, B., et al. (författare)
  • Free-to-bound radiative recombination in highly conducting InN epitaxial layers
  • 2004
  • Ingår i: Superlattices and Microstructures. - 0749-6036. ; 36:4-6, s. 563-571
  • Tidskriftsartikel (refereegranskat)abstract
    • We present a theoretical simulation of near-band-edge emission spectra of highly conducting n-InN assuming the model of 'free-to-bound' radiative recombination (FBRR) of degenerate electrons from the conduction band with nonequilibrium holes located in the valence band tails. We also study experimental photoluminescence (PL) spectra of highly conducting InN epitaxial layers grown by MBE and MOVPE with electron concentrations in the range (7.7 × 1017-6 × 1018) cm-3 and find that the energy positions and shape of the spectra depend on the impurity concentration. By modeling the experimental PL spectra of the InN layers we show that spectra can be nicely interpreted in the framework of the FBRR model with specific peculiarities for different doping levels. Analyzing simultaneously the shape and energy position of the InN emission spectra we determine the fundamental bandgap energy of InN to vary between Eg = 692 meV for effective mass mn0 = 0.042m0 and Eg =710 meV for mn0 = 0.1m0. © 2004 Elsevier Ltd. All rights reserved.
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2.
  • Darakchieva, Vanya, 1971-, et al. (författare)
  • Deformation potentials of the E1 (TO) and E2 modes of InN
  • 2004
  • Ingår i: Applied Physics Letters. - 0003-6951. ; 84:18, s. 3636-3638
  • Tidskriftsartikel (refereegranskat)abstract
    • The determination of deformation potentials of E1(TO) and E 2 modes of InN were discussed. The deformation potentials were evaluated for two sets of stiffness constants using x-ray diffraction, IR spectroscopic ellipsometry (IRSE), Raman scattering, and Grüneisen parameter values. The InN layer were grown on GaN buffer layers on (0001) sapphire by molecular beam epitaxy. It was found that the strain-free values of the InN E1(TO) mode was 477.9 cm-1 and 491.9 cm -1 for the E2 modes.
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3.
  • Darakchieva, Vanya, et al. (författare)
  • Infrared ellipsometry and Raman studies of hexagonal InN films : Correlation between strain and vibrational properties
  • 2004
  • Ingår i: Superlattices and Microstructures. - 0749-6036. ; 36:4-6, s. 573-580
  • Tidskriftsartikel (refereegranskat)abstract
    • The vibrational properties of InN films with different strain have been studied using Infrared ellipsometry and Raman scattering spectroscopy. We have established a correlation between the phonon mode parameters and the strain, which allows the determination of the deformation potentials and the strain-free frequencies of the InN E1(TO) and E2 modes. The LO phonons and their coupling to the free-carrier plasmon excitations are also discussed in relation to the carrier concentration in the films. © 2004 Elsevier Ltd. All rights reserved.
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5.
  • Jiang, Jun, et al. (författare)
  • Length dependence of coherent electron transportation in metal-alkanedithiol-metal and metal-alkanemonothiol-metal junctions
  • 2004
  • Ingår i: Chemical Physics Letters. - 0009-2614. ; 400:4-6, s. 336-340
  • Tidskriftsartikel (refereegranskat)abstract
    • We have applied the elastic-scattering Green's function theory to study the coherent electron transportation processes in both metal-alkanedithiol-metal (gold-[S(CH2)(n)S]-gold, n = 8-14) and metal-alkanemonothiol-metal (gold-[H(CH2)(n)S]-gold, n = 814) at the hybrid density functional theory level. It is shown that the current decreases exponentially with the molecular length. At the low temperature limit the electron decay rate, beta, for alkanedithiol junction is found to be around 0.30/CH2 at 1.0 V bias, much smaller than the calculated value of 0.60/CH2 for alkanemonothiol junction. The decay rate for alkanedithiol junction at the room temperature is neither sensitive to the activation of the Au-S stretching vibrational mode nor to the external bias. The calculated current-voltage characteristics and decay rates for both junctions are in excellent agreement with the corresponding experimental results.
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