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Träfflista för sökning "WFRF:(Lu W) srt2:(2000-2004);pers:(Willander Magnus 1948)"

Sökning: WFRF:(Lu W) > (2000-2004) > Willander Magnus 1948

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1.
  • Fu, Ying, 1964-, et al. (författare)
  • Photoluminescence spectra of doped GaAs films
  • 2004
  • Ingår i: Applied Physics A: Materials Science & Processing. - 0947-8396. ; 79:3, s. 619-623
  • Tidskriftsartikel (refereegranskat)abstract
    • We have studied the dependence of the photoluminescence (PL) spectrum on the doping level and the film thickness of n-GaAs thin films, both experimentally and theoretically. It has been shown theoretically that modification of the PL spectrum of p-type material by p-type doping is very small due to the large valence-band hole effective mass. The PL spectrum of n-type material is affected by two factors: (1) the electron concentration which determines the Fermi level in the material; (2) the thickness of the film due to re-absorption of the PL signal. For the n-type GaAs thin films under current investigation, the doping level as well as the film thickness can be very well calibrated by the PL spectrum when the doping level is less than 2 x 10(18) cm(-3) and the film thickness is in the range of the penetration length of the PL excitation laser.
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2.
  • Lu, W., et al. (författare)
  • Application of combinatorial material chip method on the improvement of quantum dots emission efficiency
  • 2004
  • Ingår i: Proceedings of the SPIE - The International Society for Optical Engineering. - 0277-786X. ; 5277:1, s. 99
  • Konferensbidrag (refereegranskat)abstract
    • The combinatorial material chip method has been used to study the emission efficiency of InAs/GaAs quantum dots. The photoluminescence spectroscopy is performed to obtain the rule of emission efficiency on the proton implantation dose. A pronounced enhancement of room temperature emission efficiency has been obtained by the optimized quantum dots process condition. The increment of emission efficiency up to 80 itmes has been observed. This effect may be resulted from both the proton passivation and carrier capture enhancement effects. The maximum photoluminescence peak shift is about 23 meV resulted from the intermixing of quantum dots. A linear dependence behavior has been observed for both the non-radiative recombination time and carrier relaxation time on the ion-implantation dose. The maximum enhancement of the photoluminescence is observed in the proton implantation dose of 1.0 x 1014 cm-2 followed by rapid thermal annealing at 700°C. These effects will be useful for the QDs' optoelectronic devices.
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Lu, W (2)
Li, Y. L. (1)
Zhao, Qingxiang, 196 ... (1)
Fu, Ying, 1964-, (1)
Chen, G.B (1)
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Ji, Y. L. (1)
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