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Träfflista för sökning "WFRF:(Ottosson Mikael) srt2:(2005-2009)"

Sökning: WFRF:(Ottosson Mikael) > (2005-2009)

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  • Fallberg, Anna, et al. (författare)
  • CVD of Copper(I) Nitride
  • 2009
  • Ingår i: Chemical Vapor Deposition. - Weinheim : WILEY-VCH Verlag GmbH & Co. - 0948-1907. ; 15:10-12, s. 300-305
  • Tidskriftsartikel (refereegranskat)abstract
    • Copper(I) nitride (Cu3N) is deposited by CVD using copper(II) hexafluoroacetylacetonate (Cu(hfaC)(2)), ammonia, and water as precursors. The influences of process parameters on growth rate, phase content, chemical composition and morphology are studied. The introduction of water is found to increase film growth rate on the SiO2 substrate. Films are deposited in the temperature range 250-550 degrees C. Single-phase Cu3N is obtained up to 400 degrees C. A phase mixture Of Cu3N and Cu is obtained at 425 degrees C, while a temperature of 550 degrees C and above yields single-phase Cu. X-ray diffraction (XRD) confirms that Cu3N has the cubic, anti-ReO3-type structure; with a cell parameter in the range 3.805-3.816 angstrom. X-ray photoelectron spectroscopy (XPS) verifies the Cu3N stoichiometry. The films are free from impurities (below the detection limit of 1%) at a large excess of ammonia. Scanning electron microscopy (SEM) shows facetted grains, with the faces becoming more well-defined at higher temperatures.
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  • Lindahl, Erik, et al. (författare)
  • Atomic Layer Deposition of NiO by the Ni(thd)2/H2O Precursor Combination
  • 2009
  • Ingår i: Chemical Vapor Deposition. - WILEY. - 0948-1907. ; 15:7-9, s. 186-191
  • Tidskriftsartikel (refereegranskat)abstract
    • Polycrystalline nickel oxide is deposited on SiO2 substrates by   alternating pulses of   bis(2,2,6,6-tetramethylheptane-3,5-dionato)nickel(II) (Ni(thd)(2)) and   H2O. The deposition process shows atomic layer deposition (ALD)   characteristics with respect to the saturation behavior of the two   precursors at deposition temperatures up to 275 degrees C. The growth   of nickel oxide is shown to be highly dependent on surface hydroxide   groups, and a large excess of H2O is required to achieve saturation.   Throughout the deposition temperature range the amount of carbon in the   film, originating from the metal precursor ligand, is in the range   1-2%. Above 275 degrees C ALD growth behavior is lost in favor of   thermal decomposition of the metal precursor. The initial nucleation   process is studied by atomic force microscopy (AFM) and reveals   nucleation of well-separated grains which coalesce to a continuous film   after about 250 ALD cycles.
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  • Lindahl, Erik, 1979-, et al. (författare)
  • Epitaxial NiO(100) and NiO(111) films grown by atomic layer deposition
  • 2009
  • Ingår i: Journal of Crystal Growth. - Elsevier. - 0022-0248. ; 311:16, s. 4082-4088
  • Tidskriftsartikel (refereegranskat)abstract
    • Epitaxial NiO (1 1 1) and NiO (1 0 0) films have been grown by atomic   layer deposition on both MgO (1 0 0) and alpha-Al2O3 (0 0 1) substrates   at temperatures as low as 200 degrees C by using   bis(2,2,6,6-tetramethyl-3,5-heptanedionato)Ni(II) and water as   precursors. The films grown on the MgO (1 0 0) substrate show the   expected cube on cube growth while the NiO (1 1 1) films grow with a   twin rotated 180 degrees on the alpha-Al2O3 (0 0 1) substrate surface.   The films had columnar microstructures on both substrate types. The   single grains were running throughout the whole film thickness and were   significantly smaller in the direction parallel to the surface. Thin   NiO (1 1 1) films can be grown with high crystal quality with a FWHM of   0.02-0.05 degrees in the rocking curve measurements.
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  • Resultat 1-10 av 39
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