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Träfflista för sökning "WFRF:(Wang Shumin 1963 ) "

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1.
  • Gelczuk, L., et al. (författare)
  • Bi-induced acceptor level responsible for partial compensation of native free electron density in InP1-xBix dilute bismide alloys
  • 2016
  • Ingår i: Journal of Physics D-Applied Physics. - 0022-3727. ; 49:11
  • Tidskriftsartikel (refereegranskat)abstract
    • Deep level transient spectroscopy (DLTS) has been applied to study electron and hole traps in InPBi alloys with 2.2 and 2.4% Bi grown by molecular beam epitaxy. One donor-like trap with the activation energy of 0.45-0.47 eV and one acceptor-like trap with activation energy of 0.08 eV have been identified in DLTS measurements. For the reference sample (InP grown at the same temperature), the deep donor trap has also been observed, while the acceptor trap was not detected. According to the literature, the deep donor level found in InP(Bi) at 0.45-0.47 eV below the conduction band has been attributed to the isolated P-In defect, while the second trap, which is observed only for Bi containing samples at 0.08 eV above the valence band can be attributed to Bi clusters in InPBi. This acceptor level was proposed to be responsible for the observed partial compensation of native free electron density in InPBi layers. It is also shown that the deep donor traps are active in photoluminescence (PL). A strong radiative recombination between donor traps and the valence band are observed in PL spectra at energy 0.6-0.8 eV, i.e. similar to 0.47 eV below the energy gap of InPBi, which is determined by contactless electroreflectance.
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3.
  • Pan, W., et al. (författare)
  • Raman scattering studies of dilute InP1-xBix alloys reveal unusually strong oscillator strength for Bi-induced modes
  • 2015
  • Ingår i: Semiconductor Science and Technology. - 0268-1242. ; 30:9
  • Tidskriftsartikel (refereegranskat)abstract
    • Room-temperature Raman scattering studies of new InP1-xBix alloys grown by molecular beam epitaxy are reported. Two new Bi-induced vibrations observed at 149 and 171 cm-1 are assigned to InBi-like TO and LO phonon modes, respectively, and exhibit an unusually strong intensity for the dilute regime. Two additional modes at 311 and 337 cm-1 are resolved as well with unknown origins. The Raman intensities of the InBi-like TO and LO bands, as well as the new mode at 337 cm-1, exhibit strong and linear dependence on the Bi concentration for the composition range studied, 0.003 ≤ x ≤ 0.023. This correlation may serve as a fast and convenient means of characterizing bismuth composition not only in the ternary alloy InP1-xBix but also in the quaternaries such as In1-yGayP1-xBix and In1-yAlyP1-xBix.
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4.
  • Pan, W. W., et al. (författare)
  • Growth and material properties of InPBi thin films using gas source molecular beam epitaxy
  • 2016
  • Ingår i: Journal of Alloys and Compounds. - 0925-8388. ; 656, s. 777-783
  • Tidskriftsartikel (refereegranskat)abstract
    • The effects of Bi, In flux and PH3 pressure on Bi incorporation, structural and transport properties of InPBi grown by gas source molecular beam epitaxy have been systematically studied. Incorporation of Bi behaves like a dopant and its content increases linearly with Bi flux and inversely with the InP growth rate (In flux), and is independent of the PH3 pressure studied. High PH3 pressure causes rough surface and introduction of Bi improves surface quality. Intrinsic InP grown at a low temperature reveals n-type due to the P-ln antisite defects and the electron density is proportional to the PH3 pressure and inversely proportional to the InP growth rate. Incorporation of Bi induces p-type dopant that compensates the background electron concentration but doesn't degrade the electron mobility for the Bi content up to 2.4%. These results suggest that there is still a large room left to optimize material quality and maximize Bi incorporation in InPBi using gas source molecular beam epitaxy.
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5.
  • Wang, K., et al. (författare)
  • Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy
  • 2015
  • Ingår i: Semiconductor Science and Technology. - 0268-1242. ; 30:9
  • Tidskriftsartikel (refereegranskat)abstract
    • We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III-V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 ± 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap.
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6.
  • Wang, P., et al. (författare)
  • Investigation to the deep center related properties of low temperature grown InPBi with Hall and photoluminescence
  • 2015
  • Ingår i: AIP Advances. ; 5:12
  • Tidskriftsartikel (refereegranskat)abstract
    • InP1-xBix epilayers with bismuth (Bi) concentration x= 1.0% were grown on InP by gas source molecular beam epitaxy (GS-MBE) at low temperature (LT). Bi incorporation decreased the intrinsic free electron concentration of low temperature grown InP indicated by hall analysis. It is concluded that deep level center was introduced by Bi. Influence of Si doping on the InP1-xBix films Photoluminescence (PL) was investigated. N-type doping in the InP1-xBix epilayers was found to be effective at PL enhancement. Blue shift of InPBi PL emission wavelength was observed as the Si doping concentration increasing. Two independent peaks were fitted and their temperature dependence behavior was observed to be distinct obviously. Two individual radiative recombination processes were expected to be involved.
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8.
  • Wu, X.Y., et al. (författare)
  • Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy
  • 2015
  • Ingår i: Semiconductor Science and Technology. - 0268-1242. ; 30:9
  • Tidskriftsartikel (refereegranskat)abstract
    • The effect of post-growth rapid thermal annealing on structural and optical properties of InP1-xBix thin films was investigated. InPBi shows good thermal stability up to 500 °C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 °C. The InPBi sample annealed at 800 °C shows an unexpected PL spectrum with different energy transitions.
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9.
  • Yue, L., et al. (författare)
  • Novel InGaPBi single crystal grown by molecular beam epitaxy
  • 2015
  • Ingår i: Applied Physics Express. - 1882-0778. ; 8:4
  • Tidskriftsartikel (refereegranskat)abstract
    • InGaPBi crystalline thin films with up to 2.1% bismuth concentration have been grown on GaAs substrates by molecular beam epitaxy. Rutherford backscattering spectrometry confirms that the majority of Bi atoms are located at substitutional lattice sites. The films exhibit good surface, structural, and interface quality, and their strains can be tuned from tensile to compressive by increasing the Bi content. InBi LO and GaBi LO vibrational modes in Raman spectroscopy were observed, and their intensities increased with Bi concentration. A weak photoluminescence signal was observed at 1.78 eV at room temperature for the sample with a Bi content of 0.5%.
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