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Träfflista för sökning "WFRF:(Wang Shumin 1963 ) "

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  • Yue, L., et al. (författare)
  • Novel InGaPBi single crystal grown by molecular beam epitaxy
  • 2015
  • Ingår i: Applied Physics Express. - 1882-0778. ; 8:4
  • Tidskriftsartikel (refereegranskat)abstract
    • InGaPBi crystalline thin films with up to 2.1% bismuth concentration have been grown on GaAs substrates by molecular beam epitaxy. Rutherford backscattering spectrometry confirms that the majority of Bi atoms are located at substitutional lattice sites. The films exhibit good surface, structural, and interface quality, and their strains can be tuned from tensile to compressive by increasing the Bi content. InBi LO and GaBi LO vibrational modes in Raman spectroscopy were observed, and their intensities increased with Bi concentration. A weak photoluminescence signal was observed at 1.78 eV at room temperature for the sample with a Bi content of 0.5%.
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  • Chen, Q. M., et al. (författare)
  • A new route toward light emission from Ge: tensile-strained quantum dots
  • 2015
  • Ingår i: Nanoscale. - 2040-3364. ; 7:19, s. 8725-8730
  • Tidskriftsartikel (refereegranskat)abstract
    • The tensile-strained Ge quantum dot (QD) is proposed as a new route for the realization of direct band gap conversion in Ge. Ge QDs were successfully grown on an InP substrate by molecular beam epitaxy. The strain field in the QDs were analyzed by high resolution transmission electron microscopy and simulated by the finite element method based on the measured geometries. The strain field in the QDs is found to be non-uniform and the shear component plays a significant role in the energy band structure, leading to larger required hydrostatic strain than that in the Ge thin films under biaxial strain to become a direct band gap.
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  • Fu, Ying, et al. (författare)
  • Energy band structure and spectral gain characteristics of dilute-nitride zinc blende InGaNAs quantum wells embedded in GaAs and GaNAs barriers
  • 2006
  • Ingår i: Journal of Applied Physics. - 00218979. ; 100:7
  • Tidskriftsartikel (refereegranskat)abstract
    • The spectral gain characteristics of dilute-nitride zinc blende InxGa1-xNyAs1-y quantum wells embedded in GaNy1As1-y1 barriers have been investigated experimentally and theoretically. Two samples, both with the gain peak at 1300 nm, were studied for comparison. One has a high nitrogen concentration in the quantum well with the surrounding barriers being pure GaAs. The other has a lower and uniform nitrogen concentration in the quantum well and the barriers (GaNAs barriers). Measurements show the redshift of the gain peak induced by the incorporation of nitrogen and difference in the spectral gain characteristics. The energy band structures and spectral gain characteristics are analyzed theoretically using the standard eight-band k center dot p theory. It is shown that the introduction of nitrogen atoms in the GaAs barriers reduces the barrier height for the central quantum well so that the energy sublevels in the conduction band becomes condensed. The condensation of the conduction-band energy sublevels reduces the peak gain and makes the gain spectrum narrower, in agreement with measurements.
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  • Gu, Y., et al. (författare)
  • Structural and optical characterizations of InPBi thin films grown by molecular beam epitaxy
  • 2014
  • Ingår i: Nanoscale Research Letters. - 1931-7573. ; 9:24
  • Tidskriftsartikel (refereegranskat)abstract
    • InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi composition of 2.4% is determined by Rutherford backscattering spectrometry. X-ray diffraction measurements show good structural quality for Bi composition up to 1.4% and a partially relaxed structure for higher Bi contents. The bandgap was measured by optical absorption, and the bandgap reduction caused by the Bi incorporation was estimated to be about 56 meV/Bi%. Strong and broad photoluminescence signals were observed at room temperature for samples with xBi < 2.4%. The PL peak position varies from 1.4 to 1.9 μm, far below the measured InPBi bandgap.
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  • Han, Y., et al. (författare)
  • Critical Thickness and Radius for Axial Heterostructure Nanowires Using Finite Element Method
  • 2009
  • Ingår i: Nano Letters. - 1530-6984. ; 9:5
  • Tidskriftsartikel (refereegranskat)abstract
    • Finite-element methods are used to simulate a heterostructured nanowire grown on a compliant mesa substrate. The critical thickness is calculated based on the overall energy balance approach. The strain field created by the first pair of misfit dislocations, which offsets the initial coherent strain field, is simulated. The local residual strain is used to calculate the total residual strain energy. The three-dimensional model shows that there exists a radius-dependent critical thickness below which no misfit dislocations could be generated. Moreover, this critical thickness becomes infinity for a radius less than some critical values. The simulated results are in good agreement with the experimental data. The critical radius from this work is smaller than that obtained from previous models that omit the interaction between the initial coherent strain field and the dislocation-induced strain field.
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