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Träfflista för sökning "WFRF:(Wang Shumin 1963 ) "

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1.
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2.
  • Pan, W., et al. (författare)
  • Raman scattering studies of dilute InP1-xBix alloys reveal unusually strong oscillator strength for Bi-induced modes
  • 2015
  • Ingår i: Semiconductor Science and Technology. - 0268-1242. ; 30:9
  • Tidskriftsartikel (refereegranskat)abstract
    • Room-temperature Raman scattering studies of new InP1-xBix alloys grown by molecular beam epitaxy are reported. Two new Bi-induced vibrations observed at 149 and 171 cm-1 are assigned to InBi-like TO and LO phonon modes, respectively, and exhibit an unusually strong intensity for the dilute regime. Two additional modes at 311 and 337 cm-1 are resolved as well with unknown origins. The Raman intensities of the InBi-like TO and LO bands, as well as the new mode at 337 cm-1, exhibit strong and linear dependence on the Bi concentration for the composition range studied, 0.003 ≤ x ≤ 0.023. This correlation may serve as a fast and convenient means of characterizing bismuth composition not only in the ternary alloy InP1-xBix but also in the quaternaries such as In1-yGayP1-xBix and In1-yAlyP1-xBix.
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3.
  • Wang, K., et al. (författare)
  • Growth of semiconductor alloy InGaPBi on InP by molecular beam epitaxy
  • 2015
  • Ingår i: Semiconductor Science and Technology. - 0268-1242. ; 30:9
  • Tidskriftsartikel (refereegranskat)abstract
    • We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InGaPBi thin films reveal excellent surface and structural qualities, making it a promising new III-V compound family member for heterostructures. The strain can be tuned between tensile and compressive by adjusting Ga and Bi compositions. The maximum achieved Bi concentration is 2.2 ± 0.4% confirmed by Rutherford backscattering spectroscopy. Room temperature photoluminescence shows strong and broad light emission at energy levels much smaller than the InP bandgap.
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4.
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5.
  • Wu, X.Y., et al. (författare)
  • Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy
  • 2015
  • Ingår i: Semiconductor Science and Technology. - 0268-1242. ; 30:9
  • Tidskriftsartikel (refereegranskat)abstract
    • The effect of post-growth rapid thermal annealing on structural and optical properties of InP1-xBix thin films was investigated. InPBi shows good thermal stability up to 500 °C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 °C. The InPBi sample annealed at 800 °C shows an unexpected PL spectrum with different energy transitions.
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6.
  • Yue, L., et al. (författare)
  • Novel InGaPBi single crystal grown by molecular beam epitaxy
  • 2015
  • Ingår i: Applied Physics Express. - 1882-0778. ; 8:4
  • Tidskriftsartikel (refereegranskat)abstract
    • InGaPBi crystalline thin films with up to 2.1% bismuth concentration have been grown on GaAs substrates by molecular beam epitaxy. Rutherford backscattering spectrometry confirms that the majority of Bi atoms are located at substitutional lattice sites. The films exhibit good surface, structural, and interface quality, and their strains can be tuned from tensile to compressive by increasing the Bi content. InBi LO and GaBi LO vibrational modes in Raman spectroscopy were observed, and their intensities increased with Bi concentration. A weak photoluminescence signal was observed at 1.78 eV at room temperature for the sample with a Bi content of 0.5%.
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7.
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8.
  • Chen, Q. M., et al. (författare)
  • A new route toward light emission from Ge: tensile-strained quantum dots
  • 2015
  • Ingår i: Nanoscale. - 2040-3364. ; 7:19, s. 8725-8730
  • Tidskriftsartikel (refereegranskat)abstract
    • The tensile-strained Ge quantum dot (QD) is proposed as a new route for the realization of direct band gap conversion in Ge. Ge QDs were successfully grown on an InP substrate by molecular beam epitaxy. The strain field in the QDs were analyzed by high resolution transmission electron microscopy and simulated by the finite element method based on the measured geometries. The strain field in the QDs is found to be non-uniform and the shear component plays a significant role in the energy band structure, leading to larger required hydrostatic strain than that in the Ge thin films under biaxial strain to become a direct band gap.
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9.
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10.
  • Fu, Ying, et al. (författare)
  • Energy band structure and spectral gain characteristics of dilute-nitride zinc blende InGaNAs quantum wells embedded in GaAs and GaNAs barriers
  • 2006
  • Ingår i: Journal of Applied Physics. - 00218979. ; 100:7
  • Tidskriftsartikel (refereegranskat)abstract
    • The spectral gain characteristics of dilute-nitride zinc blende InxGa1-xNyAs1-y quantum wells embedded in GaNy1As1-y1 barriers have been investigated experimentally and theoretically. Two samples, both with the gain peak at 1300 nm, were studied for comparison. One has a high nitrogen concentration in the quantum well with the surrounding barriers being pure GaAs. The other has a lower and uniform nitrogen concentration in the quantum well and the barriers (GaNAs barriers). Measurements show the redshift of the gain peak induced by the incorporation of nitrogen and difference in the spectral gain characteristics. The energy band structures and spectral gain characteristics are analyzed theoretically using the standard eight-band k center dot p theory. It is shown that the introduction of nitrogen atoms in the GaAs barriers reduces the barrier height for the central quantum well so that the energy sublevels in the conduction band becomes condensed. The condensation of the conduction-band energy sublevels reduces the peak gain and makes the gain spectrum narrower, in agreement with measurements.
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