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Träfflista för sökning "WFRF:(Chen GB) srt2:(2000-2004)"

Sökning: WFRF:(Chen GB) > (2000-2004)

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1.
  • Lu, W, et al. (författare)
  • Enhancement of room-temperature photoluminescence in InAs quantum dots
  • 2003
  • Ingår i: Applied Physics Letters. - : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 83:21, s. 4300-4302
  • Tidskriftsartikel (refereegranskat)abstract
    • We report pronounced enhancement of room-temperature photoluminescence up to 80-fold induced by proton implantation and the rapid thermal annealing process in a multilayer InAs/GaAs quantum-dot structure. This effect is studied by a combination of material methods and resulted from both proton passivation and carrier capture enhancement effects. The maximum photoluminescence peak shift is about 23 meV, resulting from the intermixing of quantum dots. Linear dependence behavior as observed for both the nonradiative recombination time and carrier relaxation time on the ion-implantation dose. Maximum enhancement of the photoluminescence is observed for a proton implantation dose of 1.0x10(14) cm(-2) followed by rapid thermal annealing at 700 degreesC. These effects will be useful for quantum dot optoelectronic devices.
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2.
  • Fu, Ying, 1964, et al. (författare)
  • Photoluminescence spectra of doped GaAs films
  • 2004
  • Ingår i: Applied Physics A. - : Springer Science Business Media. - 0947-8396 .- 1432-0630. ; 79:3, s. 619-623
  • Tidskriftsartikel (refereegranskat)abstract
    • We have studied the dependence of the photoluminescence (PL) spectrum on the doping level and the film thickness of n-GaAs thin films, both experimentally and theoretically. It has been shown theoretically that modification of the PL spectrum of p-type material by p-type doping is very small due to the large valence-band hole effective mass. The PL spectrum of n-type material is affected by two factors: (1) the electron concentration which determines the Fermi level in the material; (2) the thickness of the film due to re-absorption of the PL signal. For the n-type GaAs thin films under current investigation, the doping level as well as the film thickness can be very well calibrated by the PL spectrum when the doping level is less than 2 x 10(18) cm(-3) and the film thickness is in the range of the penetration length of the PL excitation laser.
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