| 11. |
- Hsu, Li-Han, 1981, et al.
(författare)
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Fabrication process and 110 GHz measurement result of MS-to-CPW RF-via transition for RF-MEMS devices packaging applications
- 2009
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Ingår i: 2009 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2009. - 9781893580138
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Konferensbidrag (refereegranskat)abstract
- This paper presents the fabrication process of RF-via (0-level) and flip-chip bump (1-level) transitions for applications of packaging MS (microstrip) RF-MEMS devices. The interconnect structure with MS-to-CPW transition between GaAs MEMS substrate and Al2O3 motherboard was in-house fabricated. A novel fabrication process for RF-MEMS packaging is in detail. After fabrication, the samples were measured up to 110 GHz using on-wafer probing measurement. From the measured results, the insertion loss of entire interconnect structure is better than -2 dB up to 100 GHz, documenting the feasibility for millimeter-wave RF-MEMS devices packaging applications.
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| 12. |
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| 13. |
- Klionsky, Daniel J., et al.
(författare)
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Guidelines for the use and interpretation of assays for monitoring autophagy in higher eukaryotes
- 2008
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Ingår i: Autophagy. - : Landes Bioscience. - 1554-8627 .- 1554-8635. ; 4:2, s. 151-175
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Forskningsöversikt (refereegranskat)abstract
- Research in autophagy continues to accelerate,1 and as a result many new scientists are entering the field. Accordingly, it is important to establish a standard set of criteria for monitoring macroautophagy in different organisms. Recent reviews have described the range of assays that have been used for this purpose.2,3 There are many useful and convenient methods that can be used to monitor macroautophagy in yeast, but relatively few in other model systems, and there is much confusion regarding acceptable methods to measure macroautophagy in higher eukaryotes. A key point that needs to be emphasized is that there is a difference between measurements that monitor the numbers of autophagosomes versus those that measure flux through the autophagy pathway; thus, a block in macroautophagy that results in autophagosome accumulation needs to be differentiated from fully functional autophagy that includes delivery to, and degradation within, lysosomes (in most higher eukaryotes) or the vacuole (in plants and fungi). Here, we present a set of guidelines for the selection and interpretation of the methods that can be used by investigators who are attempting to examine macroautophagy and related processes, as well as by reviewers who need to provide realistic and reasonable critiques of papers that investigate these processes. This set of guidelines is not meant to be a formulaic set of rules, because the appropriate assays depend in part on the question being asked and the system being used. In addition, we emphasize that no individual assay is guaranteed to be the most appropriate one in every situation, and we strongly recommend the use of multiple assays to verify an autophagic response.
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| 14. |
- Luo, G, et al.
(författare)
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Suppressing phosphorus diffusion in germanium by carbon incorporation
- 2005
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Ingår i: Electronics Letters. - : Iet. - 0013-5194 .- 1350-911X. ; 41:24, s. 1354-1355
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Tidskriftsartikel (refereegranskat)abstract
- A problem in the Ge MOSFET process is that the phosphor-us for n-type doping in Ge diffuses very fast. It is very difficult to form the shallow source/drain p-n junctions. It is reported, for the first time, that the phosphorus diffusion in Ge during activation (or annealing) can be suppressed effectively owing to carbon incorporation.
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| 15. |
- Nath, Swapan K., et al.
(författare)
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A nonsynonymous functional variant in integrin-alpha(M) (encoded by ITGAM) is associated with systemic lupus erythematosus
- 2008
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Ingår i: Nature Genetics. - : Springer Science and Business Media LLC. - 1061-4036 .- 1546-1718. ; 40:2, s. 152-154
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Tidskriftsartikel (refereegranskat)abstract
- We identified and replicated an association between ITGAM (CD11b) at 16p11.2 and risk of systemic lupus erythematosus (SLE) in 3,818 individuals of European descent. The strongest association was at a nonsynonymous SNP, rs1143679 (P = 1.7 x 10(-17), odds ratio = 1.78). We further replicated this association in two independent samples of individuals of African descent (P = 0.0002 and 0.003; overall meta-analysis P = 6.9 x 10(-22)). The genetic association between ITGAM and SLE implicates the alpha(M)beta2-integrin adhesion pathway in disease development.
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| 16. |
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| 17. |
- Sun, Peng, 1979, et al.
(författare)
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Intermetallic Compound Formation in Sn-Co-Cu, Sn-Ag-Cu and Eutectic Sn-Cu Solder Joints on Electroless Ni(P) Immersion Au Surface Finish After Reflow Soldering
- 2006
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Ingår i: Materials Science & Engineering B: Solid-State Materials for Advanced Technology. - : Elsevier BV. - 0921-5107. ; 135:2, s. 134-140
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Tidskriftsartikel (refereegranskat)abstract
- The interfacial reactions between Sn-0.4Co-0.7Cu eutectic alloy and immersion Au/electroless Ni(P)/Cu substrate were investigated after reflow soldering at 260 °C for 2 min. Common Sn-4.0Ag-0.5Cu and eutectic Sn-0.7Cu solders were used as reference. Two types of intermetallic compounds (IMC) were found in the solder matrix of the Sn-0.4Co-0.7Cu alloy, namely coarser CoSn 2 and finer Cu 6 Sn 5 particles, while only one ternary (Cu, Ni) 6 Sn 5 interfacial compound was detected between the solder alloy and the electroless nickel and immersion gold (ENIG) coated substrate. The same trend was also observed for the Sn-Ag-Cu and Sn-Cu solder joints. Compared with the CoSn 2 particles found in the Sn-Co-Cu solder and the Ag 3 Sn particles found in the Sn-Ag-Cu solder, the Cu 6 Sn 5 particles found in both solder systems exhibited finer structure and more uniform distribution. It was noted that the thickness of the interfacial IMCs for the Sn-Co-Cu, Sn-Ag-Cu and Sn-Cu alloys was 3.5 μm, 4.3 μm and 4.1 μm, respectively, as a result of longer reflow time above the alloy's melting temperature since the Sn-Ag-Cu solder alloy has the lowest melting point. © 2006 Elsevier B.V. All rights reserved.
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| 18. |
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| 19. |
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| 20. |
- Wu, Wei-Cheng, 1979
(författare)
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Design, Processing, and Characterization of High Frequency Flip Chip Interconnects
- 2008
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Doktorsavhandling (övrigt vetenskapligt/konstnärligt)abstract
- The demands for high frequency interconnect techniques for microwave integrated circuits (ICs) are growing with increasing operating frequencies of wireless communication systems. Interconnects have significant effect and impact on the overall system performance at high frequencies. To provide good performance in high frequency packaging, flip chip interconnect is one of the most attractive candidates compared to other schemes with low reflection and low insertion loss due to the lower parasitics involved. The widely used bond-wire interconnect suffers from serious parasitics when operating frequency reaches the gigahertz range. The tolerances such as the wire length and loop are very tight to enable an acceptable transition. At high frequencies, however, it still encounters stronger parasitics no matter how well it is controlled.This thesis deals with the design, processing, and characterization of flip chip interconnects at high frequencies. The main issues of the flip chip interconnect are described before the design criteria of the conventional flip chip interconnect are reviewed. In the following, the work of the hot-via transition is presented. It is a solution to the detuning effect of the microstrip (MS) flip chip assembly. The designs of the hot-via transition for the MS-to-CPW (coplanar waveguide) are presented; the results presented are currently world record for this technique to our knowledge. Another part of work in this thesis is the coaxial transition developed for the CPW-to-CPW flip chip interconnects. The coaxial-type transition was successfully fabricated in-house and demonstrated excellent transition performance up to 60 GHz. The entire fabrication processes for all demonstrated flip chip interconnect structures have been in-house developed and are described in details. All the design rules regarding to the different architectures for the flip chip interconnects are described and verified with the measured results. The main contributions of this thesis work are the innovative designs and the developments of both the hot-via transition and coaxial transition for the flip chip interconnects.
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