↓ Direkt till sidans innehåll
↓ Direkt till sidans sekundära innehåll (sidomenyn)

Träfflista för sökning "WFRF:(Danielsson H. O.) srt2:(2015-2019)"

Search: WFRF:(Danielsson H. O.) > (2015-2019)

Result 1-5 of 5

Sort/group result

Sort by: Hits per page:

Enumeration	Reference	Cover	Find
1.	Mindur, B, et al. (author) Gas gain stabilisation in the ATLAS TRT detector 2016 In: Journal of Instrumentation. - 1748-0221. ; 11:4 Journal article (peer-reviewed)abstract The ATLAS (one of two general purpose detectors at the LHC) Transition Radiation Tracker (TRT) is the outermost of the three tracking subsystems of the ATLAS Inner Detector. It is a large straw-based detector and contains about 350,000 electronics channels. The performance of the TRT as tracking and particularly particle identification detector strongly depends on stability of the operation parameters with most important parameter being the gas gain which must be kept constant across the detector volume. The gas gain in the straws can vary significantly with atmospheric pressure, temperature, and gas mixture composition changes. This paper presents a concept of the gas gain stabilisation in the TRT and describes in detail the Gas Gain Stabilisation System (GGSS) integrated into the Detector Control System (DCS). Operation stability of the GGSS during Run-1 is demonstrated.
2.	Ljungkvist, G, et al. (author) Study on the origin and collection of exogenous compounds in exhaled breath aerosol particles 2015 In: EUROPEAN RESPIRATORY JOURNAL. - 0903-1936. ; 46 Conference paper (other academic/artistic)
3.	Bergsten, Johan, 1988, et al. (author) AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor 2016 In: Japanese Journal of Applied Physics. - : IOP Publishing. - 1347-4065 .- 0021-4922. ; 55:5 Journal article (peer-reviewed)abstract AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a heterostructure grown by metalorganic chemical vapor deposition using an alternative method of carbon (C) doping the buffer are characterized. C-doping is achieved by using propane as precursor, as compared to tuning the growth process parameters to control C-incorporation from the gallium precursor. This approach allows for optimization of the GaN growth conditions without compromising material quality to achieve semi-insulating properties. The HEMTs are evaluated in terms of isolation and dispersion. Good isolation with OFF-state currents of 2 x 10(-6)A/mu m, breakdown fields of 70V/mu m, and low drain induced barrier lowering of 0.13mV/V are found. Dispersive effects are examined using pulsed current-voltage measurements. Current collapse and knee walkout effects limit the maximum output power to 1.3W/mm. With further optimization of the C-doping profile and GaN material quality this method should offer a versatile approach to decrease dispersive effects in GaN HEMTs. (C) 2016 The Japan Society of Applied Physics
4.	Blimark, CH, et al. (author) Over 10 years relative median survival in MM patients ≤ 65 years with VGPR or better on 1st line treatment. Population-based data on patients diagnosed 2008-2018 from the Swedish Myeloma Registry 2019 In: CLINICAL LYMPHOMA MYELOMA & LEUKEMIA. - : Elsevier BV. - 2152-2650. ; 19:10, s. E209-E209 Conference paper (other academic/artistic)
5.	Glasier, A, et al. (author) Contraception after pregnancy 2019 In: Acta obstetricia et gynecologica Scandinavica. - : Wiley. - 1600-0412 .- 0001-6349. ; 98:11, s. 1378-1385 Journal article (peer-reviewed)

Skapa referenser, mejla, bekava och länka

Permalink

Result 1-5 of 5

Refine your search

Type of publication: journal article (3); conference paper (2)

Type of content: peer-reviewed (3); other academic/artistic (2)

Author/Editor: Åkesson, T.P.A. (1); Lytken, E. (1); Anghinolfi, F. (1); Antonov, A. (1); Arslan, O. (1); Baker, O. K. (1); show more...; Banas, E. (1); Beddall, A. J. (1); Bingul, A. (1); Bocci, A. (1); Boldyrev, A. S. (1); Brock, I. (1); Catinaccio, A. (1); Cetin, S. A. (1); Dam, M. (1); Derendarz, D. (1); Di Girolamo, B. (1); Dittus, F. (1); Evans, H. (1); Farthouat, P. (1); Froidevaux, D. (1); Gay, C. (1); Gecse, Z. (1); Hajduk, Z. (1); Hance, M. (1); Hansen, P. H. (1); Heim, S. (1); Koperny, S. (1); Krasnopevtsev, D. (1); Lichard, P. (1); Loginov, A. (1); Lucotte, A. (1); Luehring, F. (1); Maleev, V. P. (1); Meyer, C. (1); Mindur, B. (1); Ogren, H. (1); Oh, S. H. (1); Olszowska, J. (1); Palacino, G. (1); Penwell, J. (1); Peshekhonov, V. D. (1); Rembser, C. (1); Romaniouk, A. (1); Rousseau, D. (1); Schaepe, S. (1); Schegelsky, V. A. (1); Shulga, E. (1); Smirnova, L. N. (1); Sulin, V. V. (1); show less...

University: Karolinska Institutet (3); Lund University (1); Chalmers University of Technology (1)

Language: English (5)

Research subject (UKÄ/SCB): Natural sciences (1); Engineering and Technology (1)

Year

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

Copyright © LIBRIS - National Library Systems
LIBRIS.kb.se

pil uppåt

Close

Copy and save the link in order to return to this view