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- Ferreira da Silva, Antonio, et al.
(författare)
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Magnetoresistance of doped silicon
- 2015
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 91:21, s. 214414-
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Tidskriftsartikel (refereegranskat)abstract
- We have performed longitudinal magnetoresistance measurements on heavily n-doped silicon for donor concentrations exceeding the critical value for the metal-nonmetal transition. The results are compared to those from a many-body theory where the donor electrons are assumed to reside at the bottom of the many-valley conduction band of the host. Good qualitative agreement between theory and experiment is obtained.
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