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Träfflista för sökning "WFRF:(Lin TS) srt2:(2015-2019)"

Sökning: WFRF:(Lin TS) > (2015-2019)

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  • Ablikim, M., et al. (författare)
  • Study of eta(1475) and X(1835) in radiative J/psi decays to gamma phi
  • 2018
  • Ingår i: Physical Review D. - : AMER PHYSICAL SOC. - 2470-0010 .- 2470-0029. ; 97:5
  • Tidskriftsartikel (refereegranskat)abstract
    • The decay J/psi -> gamma gamma phi is studied using a sample of 1.31 x 10(9) J/psi events collected with the BESIII detector. Two structures around 1475 MeV/c(2) and 1835 MeV/c(2) are observed in the gamma phi invariant mass spectrum for the first time. With a fit on the gamma phi invariant mass, which takes into account the interference between the two structures, and a simple analysis of the angular distribution, the structure around 1475 MeV/c(2) is found to favor an assignment as the eta(1475) and the mass and width for the structure around 1835 MeV/c(2) are consistent with the X(1835). The statistical significances of the two structures are 13.5 sigma and 6.3 sigma, respectively. The results indicate that both eta(1475) and X(1835) contain a sizeable s (s) over bar component.
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  • Collaert, N., et al. (författare)
  • Ultimate nano-electronics : New materials and device concepts for scaling nano-electronics beyond the Si roadmap
  • 2015
  • Ingår i: Microelectronic Engineering. - : Elsevier BV. - 0167-9317 .- 1873-5568. ; 132, s. 218-225
  • Tidskriftsartikel (refereegranskat)abstract
    • Abstract In this work, we will give an overview of the innovations in materials and new device concepts that will be needed to continue Moore’s law to the sub-10 nm technology nodes. To meet the power and performance requirements high mobility materials in combination with new device concepts like tunnel FETs and gate-all-around devices will need to be introduced. As the density is further increased and it becomes increasingly difficult to put contacts, spacers and gate in the available gate pitch, disruptive integration schemes such as vertical transistors and monolithic 3D integration might lead the way to the ultimate scaling of CMOS.
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