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Träfflista för sökning "WFRF:(Maximov Ivan) srt2:(2005-2009)"

Sökning: WFRF:(Maximov Ivan) > (2005-2009)

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  • Balocco, C, et al. (författare)
  • Microwave detection at 110 GHz by nanowires with broken symmetry
  • 2005
  • Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 5:7, s. 1423-1427
  • Tidskriftsartikel (refereegranskat)abstract
    • By using arrays of nanowires with intentionally broken symmetry, we were able to detect microwaves up to 110 GHz at room temperature. This is, to the best of our knowledge, the highest speed that has been demonstrated in different types of novel electronic nanostructures to date. Our experiments showed a rather stable detection sensitivity over a broad frequency range from 100 MHz to 110 GHz. The novel working principle enabled the nanowires to detect microwaves efficiently without a dc bias. In principle, the need for only one high-resolution lithography step and the planar architecture allow an arbitrary number of nanowires to be made by folding a linear array as many times as required over a large area, for example, a whole wafer. Our experiment on 18 parallel nanowires showed a sensitivity of approximately 75 mV dc output/mW of nominal input power of the 110 GHz signal, even though only about 0.4% of the rf power was effectively applied to the structure because of an impedance mismatch. Because this array of nanowires operates simultaneously, low detection noise was achieved, allowing us to detect -25 dBm 110 GHz microwaves at zero bias with a standard setup.
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  • Frimmer, Martin, et al. (författare)
  • Transport properties of three-terminal ballistic junctions realized by focused ion beam enhanced etching in InGaAs/InP
  • 2008
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 93:13
  • Tidskriftsartikel (refereegranskat)abstract
    • Three-terminal junction devices are realized in an InGaAs/InP quantum well by focused ion beam (FIB) implantation and selective wet etching. Room temperature electrical measurements show that the fabricated devices exhibit strong nonlinear electrical properties. The results are discussed in terms of ballistic electron transport. It is demonstrated that FIB-enhanced etching processing can be exploited as a maskless, resist-free technique for fabrication of high-quality and functional nanoelectronic devices. (C) 2008 American Institute of Physics.
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  • Joensson, C T, et al. (författare)
  • Synthesis and characterization of cobalt silicide films on silicon
  • 2006
  • Ingår i: Ion Beam Analysis - Proceedings of the Seventeenth International Conference on Ion Beam Analysis (Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms). - : Elsevier BV. - 0168-583X. ; 249, s. 532-535
  • Konferensbidrag (refereegranskat)abstract
    • Cobalt silicide has emerged as a leading contact material in silicon technology due to its low resistivity, high stability and small lattice mismatch. In this study, 0.2-0.4 mu m thick Co films were deposited on Si(100) wafers by RF magnetron sputtering at room temperature, and annealed at temperatures from 600 to 900 degrees C in vacuum. As-deposited and annealed samples were characterized by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA), X-ray diffraction (XRD) and scanning electron microscopy (SEM). Although the Si substrates were sputter cleaned before the deposition, all the samples showed a thin oxide layer at the Si/Co interfaces. Annealing up to 700 degrees C did not alter the composition at the interface except small amount Co diffusion into Si. Annealing at 800 degrees C promotes the evaporation of the oxides from the interface and, as a result, clean CoSi2 films were formed. Although the interface appeared to be sharp within the RBS resolution after high temperature annealing, the surface topography was relatively rough with varying size of crystal grains. (c) 2006 Elsevier B.V. All rights reserved.
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  • Koksharov, Yu.A., et al. (författare)
  • Magnetostatic interactions in planar ring-like nanoparticle structures
  • 2006
  • Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090. ; 515, s. 731-734
  • Tidskriftsartikel (refereegranskat)abstract
    • Numerical calculations of equilibrium state energies and local magnetic fields in planar ring-like nanoparticle structures were performed. The dipole–dipole, Zeeman and magnetic anisotropy interactions were included into the model. The result of their competition depends on the value of the external magnetic field, magnetic parameters of an individual nanoparticle, size and shape of the structures. Flux-closed vortexes, single domain, two- domain ‘‘onion’’-like, ‘‘hedgehog’’-like and more complex spin structures can be realized. The critical field, providing a sharp transition from the flux-closed vortex to the ‘‘onion’’-like state, can be regulated by a variation of the particle magnetization and anisotropy constant, their easy directions, and particle space arrangement.
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  • Luo, Gang, et al. (författare)
  • Nanoimprint lithography for the fabrication of interdigitated cantilever arrays
  • 2006
  • Ingår i: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 17:8, s. 1906-1910
  • Tidskriftsartikel (refereegranskat)abstract
    • We report on the realization of a novel interdigitated cantilever array with electrostatic control of the shape of the interdigitated array. It consists of an array of SiO2/metal double-finger cantilevers in a grating configuration together with an electrical connection part. The complete grating structure is fabricated with nanoimprint lithography, UV lithography and reactive ion etching. The patterns of the cantilever arrays are defined by nanoimprint lithography. The electrical contact pads are defined and aligned with the imprinted grating pattern by UV lithography. The two steps of reactive ion etching are optimized to get vertical sidewalls of the SiO2 cantilevers and finally to release them from the Si substrate. By applying a bias, the shape of the cantilever array can be altered due to the electrostatic force. The dimensions of the cantilevers and the spacing between them are optimized to achieve the desired functional operating characteristics of the structures. Since the fabrication scheme is based on nanoimprint lithography, such electrostatically controlled periodic structures may be relatively easily and non-expensively realized in various configurations, allowing them to function as optical switching elements, electrical filters, mass sensors, etc.
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