| 1. |
- Henry, Anne, et al.
(författare)
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AlGaN Multiple Quantum Wells and AlN Grown in a Hot-wall MOCVD for Deep UV Applications
- 2009
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Ingår i: ECS Transactions, Vol. 25, Iss. 8. - : ECS. - 9781566777452 ; , s. 837-844
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Konferensbidrag (refereegranskat)abstract
- AlxGa1-xN multiple quantum wells (MQW) were grown on AlN epilayer grown on 4H-SiC substrate. The growth was performed without interruption in a horizontal hot-wall MOCVD reactor using a mixture of hydrogen and nitrogen as carrier gases. The precursors were ammonia, trimethylaluminum and trimethylgallium. Results obtained from X-ray diffraction and infra-red reflectance were used to obtain the composition of the films when growing simple AlxGa1 xN layer. Visible reflectance was used to evaluate the thickness of the films. Finally the MQW parameters as thicknesses and composition variation were obtained by scanning transmission electron microscopy and demonstrated an agreement with the growth parameters used
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| 2. |
- Israr, Muhammed Qadir, et al.
(författare)
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Trimming of aqueous chemically grown ZnO nanorods into ZnO nanotubes and their comparative optical properties
- 2009
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Ingår i: APPLIED PHYSICS LETTERS. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 95:7, s. 073114-
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Tidskriftsartikel (refereegranskat)abstract
- Highly oriented ZnO nanotubes were fabricated on a silicon substrate by aqueous chemical growth at low temperature (andlt; 100 degrees C) by trimming of ZnO nanorods. The yield of nanotubes in the sample was 100%. Photoluminescence spectroscopy of the nanotubes reveals an enhanced and broadened ultraviolet (UV) emission peak, compared with the initial nanorods. This effect is attributed to whispering gallery mode resonance. In addition, a redshift of the UV emission peak is also observed. Enhancement in the deep defect band emission in the nanotubes compared to nanorods was also manifested as a result of the increased surface area.
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| 3. |
- Palisaitis, Justinas, 1983-, et al.
(författare)
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Two Dimensional X-ray Diffraction Mapping of Basal Plane Orientation on SiC Substrates
- 2009
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Ingår i: ECSCRM2008,2009. - Materials Science Forum Vols. 615-617 : Trans Tech Publications. - 9780878493340 ; , s. 275-278
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Konferensbidrag (refereegranskat)abstract
- We have performed 2D X-ray diffraction mapping of the SiC lattice basal plane orientation over full 2” SiC substrates. Measurements of the omega angle were made in two perpendicular directions <11-20> and <1-100>, which gives the complete vectorized tilt of the basal planes. The Mapping revealed two characteristic bending behaviors on measured commercial wafers. The first is characterized by large variations in omega angle across the wafer in both crystallographic directions. The continuously changing omega angle in both directions gives the wafer an apparent rotationally symmetric bending which is concave towards the growth direction. The second characteristic behavior is seen in wafers with lower degree of omega angle variation. The variations in this type of wafers are not changing linearly, but are bending the basal planes with two-fold symmetry.
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