| 1. |
- Beck, Marc, et al.
(författare)
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Improving stamps for 10 nm level wafer scale nanoimprint lithography
- 2002
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Ingår i: Microelectronic Engineering. - 1873-5568. ; 61-2, s. 441-448
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Tidskriftsartikel (refereegranskat)abstract
- The smaller the features on the stamp the more important are the interactions between stamp and polymer layer. A stamp rich in small structures will effectively show a surface area enlargement, which generally leads to adhesion of the polymer to the stamp. This makes a subsequent imprint impossible without troublesome and time-consuming cleaning. The anti-adhesion properties of Si- or SiO2-based stamps can be improved by binding fluorinated silanes covalently to the surface. In this paper, we demonstrate that the deposition procedure as well as the environment during deposition are important with respect to the quality and performance of the molecular layer. (C) 2002 Published by Elsevier Science B.V.
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| 2. |
- Carlberg, Patrick, et al.
(författare)
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Nanoimprint in mr-L 6000.1 XP/PMMA resist system
- 2002
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Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
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Konferensbidrag (refereegranskat)abstract
- Use of the new resist system mr-L 6000.1 XP in combination with PMMA is demonstrated to give sub-100 nm resolution in nanoimprint lithography. Low glass transition temperature in combination with high plasma stability makes this resist suitable for achieving desirable resist profiles after the imprint process. Imprint conditions for mr-L 6000.1 XP/PMMA resist system as well as imprint results are described and discussed
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| 3. |
- Maximov, Ivan, et al.
(författare)
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Fabrication of Si-based nanoimprint stamps with sub-20 nm features
- 2002
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Ingår i: MICROELECTRONIC ENGINEERING. - 1873-5568 .- 0167-9317. ; 61-2, s. 449-454
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Konferensbidrag (refereegranskat)abstract
- We present two alternative methods for fabrication of nanoimprint lithography stamps in SiO2 with sub-20 nm features: (a) optimized electron beam lithography (EBL) and lift-off patterning of a 15-nm thick Cr mask, and (b) aerosol deposition of W particles in the 20-nm size range. In both cases, the pattern transfer into SiO2 was performed using reactive ion etching (RIE) with CHF3 as etch gas. In the first approach, we used a double layer resist system (PMMA/ZEP 520A7 positive resists) for the EBL exposure. Resist thickness, exposure dose and development time were optimized to obtain 15-20 nm features after Cr lift-off. In the second approach, we used size selected W aerosol particles as etch masks during etching of SiO2. Both methods of stamp fabrication are compared and discussed. (C) 2002 Published by Elsevier Science B.V.
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| 4. |
- Montelius, Lars, et al.
(författare)
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Next generation nanotechnologies for sensor array fabrication
- 2002
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Ingår i: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
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Konferensbidrag (refereegranskat)abstract
- New emerging technologies such as nanoimprint lithography (NIL) offers the biosensor research community the possibility to fabricate low-cost biodevices having nanometer dimensions. Such nanosized devices can be applied as biosensors where new functions might emerge due to the nanoscale dimensions. In this paper we will discuss various nanolithography methods as well as the benefits of going to the nanoscale for biosensor applications. We will also show results from mixed NIL and UV-lithography for fabrication of interdigitated nanobiosensor electrodes on up to 6'' large Si wafers. The electrode and inter-electrode distances were 100 nm wide over a total area of 200 μm×200 μm. We will also show the obtained enhanced efficiency of redox-recycling when utilizing such nanoscaled biosensors
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| 5. |
- Timmers, H, et al.
(författare)
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Threshold stoichiometry for beam induced nitrogen depletion of SiN
- 2002
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Ingår i: Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. - 0168-583X. ; 190, s. 428-432
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Tidskriftsartikel (refereegranskat)abstract
- Measurements of the stoichiometry of silicon nitride films as a function of the number of incident ions using heavy ion elastic recoil detection (ERD) show that beam-induced nitrogen depletion depends on the projectile species. the beam energy, and the initial stoichiometry. A threshold stoichiometry exists in the range 1.3 > N/Si greater than or equal to 1, below which the films are stable against nitrogen depletion. Above this threshold, depletion is essentially linear with incident fluence. The depletion rate correlates non-linearly with the electronic energy loss of the projectile ion in the film. Sufficiently long exposure of nitrogen-rich films renders the mechanism, which prevents depletion of nitrogen-poor films, ineffective. Compromising depth-resolution. nitrogen depletion from SiN films during ERD analysis can be reduced significantly by using projectile beams with low atomic numbers. (C) 2002 Published by Elsevier Science B.V.
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