| 1. |
- Carlberg, Patrick, et al.
(författare)
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Lift-off process for nanoimprint lithography
- 2003
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Ingår i: Microelectronic Engineering. - 0167-9317 .- 1873-5568. ; 67-8, s. 203-207
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Konferensbidrag (refereegranskat)abstract
- We report a novel a lift-off method for nanoimprint lithography. This is a bi-layer method, using a polymethyl methacrylate (PMMA) on lift-off layer (LOL) resist scheme. For the imprint step, direct evidence for good pattern transfer down to 20 nm is shown. Oxygen plasma ashing is required to remove residual PMMA. A liquid solvent, MF 319, is used to transfer the pattern down to the silicon. The LOL is dissolved isotropically while the PMMA is unaffected. Ashing time can kept to a minimum through the wet etch method. This reduces the line widening effect. After metal evaporation a two-step lift-off process prevents metal flakes from adhering to the surface electrostatically. At first warm acetone breakes apart the metal layer and dissolves the PMMA, then warm Remover S-1165 removes the LOL and remaining metal. Structures of lines down to 50 nm and dots with a diameter of sub 20 nm are presented.
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| 2. |
- Finder, C, et al.
(författare)
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Fluorescence microscopy for quality control in nanoimprint lithography
- 2003
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Ingår i: Microelectronic Engineering (Proceedings of the 28th International Conference on Micro- and Nano-Engineering). - 0167-9317 .- 1873-5568. ; 67-8, s. 623-628
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Konferensbidrag (refereegranskat)abstract
- Fluorescence microscopy is introduced as a low cost quality control process for nanoimprint lithography. To depict imprinted structures down to 1 mum lateral size and to detect residues down to 100 nm lateral size, the standard printable polymer mr-18000 is labelled with less than 0.1 wt.% fluorescent dye. Three different types of stamps are used to determine the dependence of the shape and size of stamp features in a series of imprints. The quality of a stamp is given by the sticking polymer residues per unit area. Fluorescence light images as well as visible light images are analysed. Changes in the area of the stamp covered with polymer as a function of the number of imprints is summarised in a statistical process chart. Adhesion was artificially induced in order to observe self cleaning of virgin stamps. They were detected and monitored, suggesting that this method is a suitable technique for quality control and that it could be easily adapted to the nanoimprint process. (C) 2003 Elsevier Science B.V. All rights reserved.
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| 3. |
- Ghatnekar-Nilsson, Sara, et al.
(författare)
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Fabrication and mechanical characterization of ultrashort nanocantilevers
- 2003
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 83:5, s. 990-992
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Tidskriftsartikel (refereegranskat)abstract
- Three aspects on nanocantilevers are presented in this letter. First, we present the fabrication process of 2 mum long freestanding chromium cantilevers with width 150 nm, and thickness 50 nm. Second, a measurement scheme using an atomic force microscope operating in contact mode was employed to study the mechanical properties along the length of the cantilevers. Third, we have investigated extremely large deflections on these nanoscale cantilevers demonstrating their high ductility. The spring constants calculated from the experimental data are smaller than expected from classical mechanics calculations, but show good agreement with previously reported calculations for largely deflected beams. (C) 2003 American Institute of Physics.
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| 4. |
- Maximov, Ivan, et al.
(författare)
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Nanoimprint technology for fabrication of three-terminal ballistic junction devices in GaInAs/InP
- 2003
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Ingår i: Microelectronic Engineering. - 1873-5568. ; 67-8, s. 196-202
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Tidskriftsartikel (refereegranskat)abstract
- We present processing technology based on nanoimprint lithography (NIL) and wet etching for fabrication of GaInAs/InP three-terminal ballistic junction (TBJ) devices. To transfer sub-100 nm features into a high-mobility InP-based 2DEG material, we used SiO2/Si stamps made with electron beam lithography and reactive ion etching. After the NIL, the resist residues are removed in oxygen plasma followed by wet etching of GaInAs/InP to define the M-structures. Fabricated TBJ-devices are characterized using scanning electron microscopy and electron transport measurements. Highly non-linear electrical characteristics of the TBJ structures are demonstrated and compared with E-beam defined devices. (C) 2003 Elsevier Science B.V. All rights reserved.
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