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- Borgström, Magnus, et al.
(author)
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Site control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
- 2003
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In: Journal of Crystal Growth. - 0022-0248. ; 248, s. 310-316
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Journal article (peer-reviewed)abstract
- In this paper. we present the effect of annealing temperature and annealing time on InAs site-controlled quantum dot growth. Individual InAs quantum dots formed by self-assembling have been positioned into holes, created by partial overgrowth of electron beam induced nano-carbon deposits by metal organic vapor phase epitaxy. As/P exchange reactions produce material sufficient for selective dot nucleation in the holes. Results. showing that As/P exchange reactions occur even when capping the dots with InP are presented. (C) 2002 Elsevier Science B.V. All rights reserved.
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| 3. |
- Borgström, Magnus, et al.
(author)
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Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions
- 2002
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In: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
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Conference paper (peer-reviewed)abstract
- We present the effect of annealing temperature and annealing time on InAs/InP site-controlled quantum dot growth. Electron beam pre-patterning forms carbon nano-deposits at the InP surface, which then can be used as growth masks to form nano-holes at the surface. By only annealing of the patterned InP surface under an arsine ambient, As/P exchange reactions produce material sufficient for selective dot nucleation in the holes at the surface
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| 4. |
- Bryllert, Tomas, et al.
(author)
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Designed emitter states in resonant tunneling through quantum dots
- 2002
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 80:15, s. 2681-2683
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Journal article (peer-reviewed)abstract
- Resonant tunneling through a single layer of self-assembled quantum dots (QDs) is compared to tunneling through two layers of vertically aligned (stacked) dots. The difference can be viewed as going from a two-dimensional emitter to a zero-dimensional emitter. The temperature dependence of current peaks originating in tunneling through individual QDs and individual stacks is used to clarify this point. In addition, we show that the statistical size distribution of self-assembled quantum dots causing the inhomogeneous broadening in luminescence experiments can be analyzed in a resonant tunneling experiment. (C) 2002 American Institute of Physics.
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| 5. |
- Bryllert, Tomas, et al.
(author)
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Resonant tunneling through coupled self-assembled quantum dots and the influence of inhomogeneous broadening
- 2002
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In: 7th International Conference on Nanometer-Scale Science and Technology and 21st European Conference on Surface Science.
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Conference paper (peer-reviewed)abstract
- Resonant tunneling through a single layer of self-assembled quantum dots (QDs) as well as tunneling through two layers of vertically aligned (stacked) dots is investigated. The difference between single and double layers of QDs can be viewed as going from a two-dimensional emitter to a zero-dimensional emitter. By fabricating small-area devices we are able to probe single stacks of quantum dots, revealing details of the coupling between the stacked dots. Very sharp resonances, with peak-to-valley ratios of several hundred, have been measured in the current-voltage characteristics. We also show that the statistical size distribution of self-assembled quantum dots causing the inhomogeneous broadening in luminescence experiments can be analysed in a resonant tunneling experiment
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| 6. |
- Carlberg, Patrick, et al.
(author)
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Nanoimprint - a tool for realizing nano-bio research
- 2004
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In: 2004 4th IEEE Conference on Nanotechnology. - 0780385365 ; , s. 199-200
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Conference paper (peer-reviewed)abstract
- In this paper, we present a status report on how implementation of nanoimprint lithography has advanced our research. Contact guidance nerve growth experiments have so far primarily been done on micrometer-structured surfaces. We have made a stamp with 17 areas of different, submicron, line width and spacing covering a total 2.6 mm
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| 9. |
- Johansson, Mikael, et al.
(author)
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Correlation between overgrowth morphology and optical properties of single self-assembled InP quantum dots
- 2003
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In: Physical Review B (Condensed Matter and Materials Physics). - 1098-0121. ; 68:12
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Journal article (peer-reviewed)abstract
- We have studied the early stages of GaInP overgrowth on InP quantum dots (QD's) experimentally and theoretically. A direct correlation between the surface morphology and the optical properties of individual InP QD's is made using scanning tunneling microscopy (STM) and scanning tunneling luminescence. The geometric structure of the islands is further investigated using cross-sectional transmission electron microscopy (TEM). The overgrowth occurs in three stages; initially the InP QD's act as seeding points for the overgrowth, where the GaInP grows laterally from the side facets of the QD. The growth occurs preferentially in the [110] direction and elongated GaInP/InP islands are formed. As the overgrowth continues the islands increase laterally in size and GaInP also starts to grow between the islands, but not covering the top of the InP QD's. The growth of GaInP on top of the QD's commences once the islands have begun to coalesce. Using a model based on the STM and TEM results the electronic structures of the QD's have been calculated by eight-band k.p theory. The calculations are in good agreement with the experimental results. Our findings unravel the details of the strain induced energy shift of the QD luminescence previously reported [Pistol , Appl. Phys. Lett. 67, 1438 (1995)].
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