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- Pettersson, H., et al.
(författare)
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Assembling Ferromagnetic Single-electron Transistors with Atomic Force Microscopy
- 2008
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Ingår i: Nanostructures in electronics and photonics. - London : Pan Stanford Publishing. - 9789814241106 - 9789814241120 ; , s. 29-40
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Bokkapitel (refereegranskat)abstract
- Ferromagnetic Single Electron Transistors (F-SETs) comprise ferromagnetic electrodes connected to a ferromagnetic- or non-magnetic central island via tunnel barriers. These devices are important for studies of spin-transport physics in confined structures. Here we describe the development of a novel type of AFM-assembled nano-scale F-SETs suitable for spin-transport investigations at temperatures above 4.2 K. The ingenious fabrication technique means that their electrical characteristics can be tuned in real-time during the fabrication sequence by re-positioning the central island with Ångström precision.
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- Suyatin, Dmitry, et al.
(författare)
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Electrical properties of self-assembled branched InAs nanowire junctions
- 2008
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Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 8:4, s. 1100-1104
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Tidskriftsartikel (refereegranskat)abstract
- We investigate electrical properties of self-assembled branched InAs nanowires. The branched nanowires are catalytically grown using chemical beam epitaxy, and three-terminal nanoelectronic devices are fabricated from the branched nanowires using electron-beam lithography. We demonstrate that, in difference from conventional macroscopic junctions, the fabricated self-assembled nanowire junction devices exhibit tunable nonlinear electrical characteristics and a signature of ballistic electron transport. As an example of applications, we demonstrate that the self-assembled three-terminal nanowire junctions can be used to implement the functions of frequency mixing, multiplication, and phase-difference detection of input electrical signals at room temperature. Our results suggest a wide range of potential applications of branched semiconductor nanostructures in nanoelectronics.
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