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Träfflista för sökning "WFRF:(Svensson Erik) ;srt2:(2000-2019)"

Sökning: WFRF:(Svensson Erik) > (2000-2019)

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41.
  • Kilpi, Olli Pekka, et al. (författare)
  • Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs
  • 2019
  • Ingår i: IEEE Journal of the Electron Devices Society. - 2168-6734. ; 7, s. 70-75
  • Tidskriftsartikel (refereegranskat)abstract
    • Vertical InAs/InGaAs nanowire MOSFETs are fabricated in a gate-last fabrication process, which allows gate-lengths down to 25 nm and accurate gate-alignment. These devices demonstrate high performance with transconductance of 2.4 mS/μm, high on-current, and off-current below 1 nA/μm. An in-depth analysis of the heterostructure MOSFETs are obtained by systematically varying the gate-length and gate location. Further analysis is done by using virtual source modeling. The injection velocities and transistor metrics are correlated with a quasi-ballistic 1-D MOSFET model. Based on our analysis, the observed performance improvements are related to the optimized gate-length, high injection velocity due to asymmetric scattering, and low access resistance.
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42.
  • Kilpi, Olli Pekka, et al. (författare)
  • Vertical heterojunction InAs/InGaAs nanowire MOSFETs on Si with Ion = 330 μa/μm at Ioff = 100 nA/μm and VD = 0.5 v
  • 2017
  • Ingår i: 2017 Symposium on VLSI Technology, VLSI Technology 2017. - 9784863486058 ; , s. 36-37
  • Konferensbidrag (refereegranskat)abstract
    • We present vertical InAs nanowire MOSFETs on Si with an In0.7Ga0.3As drain. The devices show Ion and gm/SS record performance for vertical MOSFETs and Ioff below 1 nA/μm at Vd 0.5 V. We show a device with gm=1.4 mS/μm and SS=85 mV/dec, therefore having Q-value (gm/SS) of 16. The device has Ion=330 μA/μm and 46 μA/μm at Ioff 100 nA/μm and 1 nA/μm, respectively. Furthermore, we show a device with SS=68 mV/dec and Ion=88 μA/μm at Ioff 1 nA/μm and Vd 0.5 V.
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43.
  • Kilpi, Olli Pekka, et al. (författare)
  • Vertical InAs/InGaAs Heterostructure Metal-Oxide-Semiconductor Field-Effect Transistors on Si
  • 2017
  • Ingår i: Nano Letters. - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 17:10, s. 6006-6010
  • Tidskriftsartikel (refereegranskat)abstract
    • III-V compound semiconductors offer a path to continue Moore's law due to their excellent electron transport properties. One major challenge, integrating III-V's on Si, can be addressed by using vapor-liquid-solid grown vertical nanowires. InAs is an attractive material due to its superior mobility, although InAs metal-oxide-semiconductor field-effect transistors (MOSFETs) typically suffer from band-to-band tunneling caused by its narrow band gap, which increases the off-current and therefore the power consumption. In this work, we present vertical heterostructure InAs/InGaAs nanowire MOSFETs with low off-currents provided by the wider band gap material on the drain side suppressing band-to-band tunneling. We demonstrate vertical III-V MOSFETs achieving off-current below 1 nA/μm while still maintaining on-performance comparable to InAs MOSFETs; therefore, this approach opens a path to address not only high-performance applications but also Internet-of-Things applications that require low off-state current levels.
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44.
  • Krishnaraja, Abinaya, et al. (författare)
  • Fabrication of Tunnel FETs demonstrating sub-thermal subthreshold slope
  • 2019
  • Konferensbidrag (refereegranskat)abstract
    • Tunnel Field Effect Transistor (TFET), based on band-to-band tunneling, overcomes the thermal limit (subthreshold slope (S) > 60 mV/decade) of the MOSFETs by filtering the high-energy Fermi tail, thereby allowing a substantial reduction of supply voltage and power consumption. Despite the steep slope behavior, TFETs can suffer from ambipolarity wherein carriers tunnel into the channel at both high positive and negative gate voltages. In this work, we demonstrate the fabrication of InAs/InGaAsSb/GaSb vertical nanowire TFET devices and present experimental data showcasing suppressed ambipolarity and a minimum S = 39 mV/decade at Vds=0.05V. The nanowires were grown using MOVPE where the 100nm long InAs drain was n-doped with TESn followed by a 100nm undoped InAs channel and a 100nm/300nm DEZn doped InGaAsSb/GaSb source. After growth, the InAs was selectively digitally etched using citric acid to reduce the channel diameter from 40nm to 25nm. The electrostatics was improved, compared to our previously reported devices, with a gate stack of ALD bilayer of 1nm/3nm Al2O3/HfO2 (EOT~1nm) followed by 30nm sputtered W. To decrease the ambipolar conduction, a gate-drain underlap of approximately 20nm was used which widens the tunnel barrier at the drain junction. Since the gate length is defined by the bottom spacer thickness in vertical transistors, the underlap provides a shorter gate positioned close to the source-channel junction. Thus the new process scheme has improved the slope and reduced the OFF current by one order of magnitude compared to our previous devices [1]. [1] E. Memisevic et al., IEEE Trans.ElectronDevices,vol.64,4746–4751, 2017.
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45.
  • Krishnaraja, Abinaya, et al. (författare)
  • Reducing ambipolar off-state leakage currents in III-V vertical nanowire tunnel FETs using gate-drain underlap
  • 2019
  • Ingår i: Applied Physics Letters. - : AIP Publishing. - 1077-3118 .- 0003-6951. ; 115:14
  • Tidskriftsartikel (refereegranskat)abstract
    • Tunnel Field-Effect Transistors (TFETs) are an emerging alternative to CMOS for ultralow power and neuromorphic applications. The off current (Ioff) and, hence, the subthreshold swing (S) in these devices are limited by ambipolarity, which degrades its capabilities in complementary circuits. Here, we investigate experimentally vertical InAs/InGaAsSb/GaSb nanowire TFETs with gate-drain underlap as a potential solution to avoid ambipolarity and study the temperature dependence of the tunneling current. We compare two different TFET designs, one with an underlap between the gate and drain and the other with an overlap. The introduction of a 25-nm-long underlap region reduced the minimum achievable current Imin from 92 pA/μm to 23 pA/μm by suppressing the ambipolarity and simultaneously improved the minimum S at room temperature from 46 mV/dec to 41 mV/dec at Vds = 0.1 V. We also observe a reduction in the measured on current (Ion) from 0.1 μA/μm in the overlapped device to 0.01 μA/μm in the underlapped device at a drain bias (Vds) = 0.1 V and Ioff = 1 nA/μm. Temperature dependent measurements reveal a potential barrier at the drain junction due to the ungated region at the underlap. We determine a barrier height of 63 meV at Vds = 0.1 V based on thermionic emission combined with a ballistic transport model. Thus, we conclude that gate placement on the drain side is crucial to obtain the low off-currents in TFETs required for ultralow power electronic applications but that the trade-off between Ion and Ioff has to be considered.
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46.
  • Larsson, Erik, 1983, et al. (författare)
  • A Comparative Study of the Initial Corrosion of KCl and PbCl2 on a Low-Alloyed Steel
  • 2017
  • Ingår i: Oxidation of Metals. - : Springer Science and Business Media LLC. - 1573-4889 .- 0030-770X. ; 87:5-6, s. 779-787
  • Tidskriftsartikel (refereegranskat)abstract
    • Heat exchange surfaces in biomass- and waste-fired boilers are exposed to corrosive species due to the considerable amounts of alkali chlorides and PbCl2 which are released during combustion. The corrosivity of alkali chlorides toward superheater alloys exposed at high temperature has been studied extensively. However, at lower material temperatures, i.e., at waterwall conditions, considerably less research has been performed. In order to investigate the effect of small amounts of KCl and PbCl2 during the initial stages of the corrosion attack, a Fe–2.25Cr–1Mo steel was exposed for 24 h in an atmospheres consisting of O2 + H2O + N2 at 400 °C. Both KCl and PbCl2 resulted in an increased corrosion rate compared to the reference. The aim of the present paper is to investigate the influence of KCl and PbCl2 on the initial oxidation of a Fe–2.25Cr–1Mo steel. The work involves a detailed microstructural investigation as well as thermodynamic equilibrium calculations.
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47.
  • Lindahl, Mattias, 1971-, et al. (författare)
  • Industrial cleaning with Qlean Water : a case study of printed circuit boards
  • 2013
  • Ingår i: Journal of Cleaner Production. - : Elsevier BV. - 0959-6526 .- 1879-1786. ; 47, s. 19-25
  • Tidskriftsartikel (refereegranskat)abstract
    • Many manufacturing companies are looking for ways to substitute environmentally problematic cleaning methods for surface treatments with more environmentally friendly ones. In this paper, one potential solution is described. The Qlean method, based on cleaning with highly pure water (in this paper defined as Qlean Water), is a novel cleaning method. This method, now utilized at one plant at a leading major international electronic company, has substituted previous chemical-based methods for cleaning printed circuit boards prior to lacquering. This paper presents, based on that company's primary data, a comparative study using environmental analysis and economic life cycle cost review between cleaning with Qlean Water and conventional cleaning. The focus is on the environmental and economic performance of the two alternatives. The conclusion is that Qlean Water offers both a significant economic and environmental cost reduction and a better product. This is the case even though all identified economic benefits derived from using Qlean Water, e.g. that the quality and technical lifetime have been extended for the printed circuit boards with the Qlean Water cleaning method, are not considered in the economic analysis.
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48.
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49.
  • Mattsson, Jan Erik, et al. (författare)
  • Halmaska i kretslopp
  • 2010
  • Ingår i: LTJ-fakultetens faktablad.
  • Annan publikation (populärvet., debatt m.m.)abstract
    • Analyser på vetehalm från fyra platser i Skåne samt danska erfarenheter från återföring av halmaska i stor skala visar att halmaska kan användas som gödselmedel på åkermark och klassas som ett kaliumgödselmedel med viss fosfor- och kalkverkan. Med halmbärgning och halmeldning bortförs växtnäringen i halmen från åkermarken, men den finns i halmaskan, förutom kvävet som följer med rökgaserna. Askan innehåller dock även andra ämnen som tagits upp av växten, t. ex. kadmium. Kadmiumhalten var högre i vetehalm från gårdar med högre kadmiumhalt i matjorden. Om endast bottenaskan efter förbränning av halm används som gödselmedel, bör metoder utvecklas för utvinning av kalium ur flygaskan, eftersom den innehåller hälften av halmaskans kalium. Fortsatta studier bör inriktas på växttillgängligheten hos kalium, fosfor och kadmium i halmaska samt utvärdering av ny teknik för spridning av små mängder halmaska per hektar
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50.
  • Memisevic, Elvedin, et al. (författare)
  • Impact of Band-Tails on the Subthreshold Swing of III-V Tunnel Field-Effect Transistor
  • 2017
  • Ingår i: IEEE Electron Device Letters. - 0741-3106. ; , s. 1661-1664
  • Tidskriftsartikel (refereegranskat)abstract
    • We present a simple model to evaluate the sharpness of the band edges for tunnel field-effect transistors by comparing the subthreshold swing and the conductance in the negative differential resistance region. This model is evaluated using experimental data from InAs/InGaAsSb/GaSb nanowire tunnel-field effect transistors with the ability to reach a subthreshold swing well below the thermal limit. A device with the lowest subthreshold swing, 43 mV/decade at 0.1 V, exhibits also the sharpest band-edge decay parameter E0 of 43.5 mV although in most cases the S<
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