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Träfflista för sökning "WFRF:(Vassilev Vessen 1969) srt2:(2015-2019)"

Sökning: WFRF:(Vassilev Vessen 1969) > (2015-2019)

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1.
  • Algaba Brazalez, Astrid, 1983, et al. (författare)
  • Design of F-Band Transition From Microstrip to Ridge Gap Waveguide Including Monte Carlo Assembly Tolerance Analysis
  • 2016
  • Ingår i: IEEE Transactions on Microwave Theory and Techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 64:4, s. 1245-1254
  • Tidskriftsartikel (refereegranskat)abstract
    • This paper describes the design and realization of a transition from a microstrip line to a ridge gap waveguide operating between 95 and 115 GHz. The study includes simulations, measurements, and a Monte Carlo analysis of the assembly tolerances. The purpose of this tolerance study is to identify the most critical misalignments that affect the circuit performance and to provide guidelines about the assembly tolerance requirements for the proposed transition design.
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2.
  • Carpenter, Sona, 1983, et al. (författare)
  • A +14.2 dBm, 90–140 GHz Wideband Frequency Tripler in 250-nm InP DHBT Technology
  • 2018
  • Ingår i: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 28:3, s. 239-241
  • Tidskriftsartikel (refereegranskat)abstract
    • A single-chip active frequency tripler circuit with output at F-band (90-140 GHz) is presented. A common-emitter transistor stage with input and output matching circuits is used to produce the third harmonic, followed by a five-pole bandpass filter and a wideband four-stage power amplifier to amplify and increase the output power. The circuit is implemented in a 250-nm InP double-heterostructure bipolar transistor technology with ft/fmax 350/650 GHz, respectively. The chip achieves a peak output power of 14.2 dBm from 99 to 126 GHz at 2-dBm input power and conversion gain of 13 dB at -2-dBm input power. The measured 3-dB output bandwidth is 51 GHz from 90 to 141 GHz which corresponds to 44.2% relative bandwidth. It demonstrates up to 23-dBc rejection ratio of the first and the second harmonics. The dc power consumption is 156 mW at 2-dBm input power. The chip size is 0.9 × 0.96 mm2 including pads and achieves a power efficiency of 16.7%.
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3.
  • Fan, Fangfang, 1981, et al. (författare)
  • Bandwidth Investigation on Half-Height Pin in Ridge Gap Waveguide
  • 2018
  • Ingår i: IEEE Transactions on Antennas and Propagation. - 0018-926X .- 1558-2221. ; 66:1, s. 100-108
  • Tidskriftsartikel (refereegranskat)abstract
    • Gap waveguide is a promising transmission structure, especially for millimeter-wave (mmW) and terahertz applications. It does not require conductive connection between the upper and the lower plates, which makes this technology gain advantages over conventional rectangular waveguides and substrate integrated waveguides in an mmW and terahertz regime. Different fabrication methods for gap waveguides should be employed for different frequency bands applied, such as molding, milling, die forming, electrical discharge machining, microelectromechanical systems, and 3-D printing. Therefore, different pin forms used in gap waveguides are required to match the applied fabrication methods. In this paper, a new pin form, the half-height-pin form, in gap waveguides is proposed for reducing the fabrication cost, and its stopband characteristics are investigated and compared with the previous full-height pins in gap waveguides at the V  -band. A device of a double-ridged gap waveguide with two 90° bends for verifying the stopband characteristic analysis of the new pin form has been designed and manufactured. The measured data confirm our analysis and simulations.
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4.
  • Forkman, Peter, 1959, et al. (författare)
  • A compact receiver system for simultaneous measurements of mesospheric CO and O3
  • 2016
  • Ingår i: Geoscientific Instrumentation, Methods and Data Systems. - : Copernicus GmbH. - 2193-0856 .- 2193-0864. ; 2016:5, s. 27-44
  • Tidskriftsartikel (refereegranskat)abstract
    • During the last decades, ground-based microwave radiometry has matured into an established remote sensing technique for measuring vertical profiles of a number of gases in the stratosphere and the mesosphere. Microwave radiometry is the only ground-based technique that can provide vertical profiles of gases in the upper stratosphere and mesosphere both day and night, and even during cloudy conditions. Except for microwave instruments placed at high-altitude sites, or at sites with dry atmospheric conditions, only molecules with significant emission lines below 150 GHz, such as CO, H2O, and O3, can be observed. Vertical profiles of these molecules can give important information about chemistry and dynamics in the middle atmosphere. Today these measurements are performed at relatively few sites; more simple and reliable instrument solutions are required to make the measurement technique more widely spread. This need is urgent today as the number of satellite sensors observing the middle atmosphere is about to decrease drastically. In this study a compact double-sideband frequency-switched radiometer system for simultaneous observations of mesospheric CO at 115.27 GHz and O3 at 110.84 GHz is presented. The radiometer, its calibration scheme, and its observation method are presented. The retrieval procedure, including compensation of the different tropospheric attenuations at the two frequencies and error characterization, are also described. The first measurement series from October 2014 until April 2015 taken at the Onsala Space Observatory, OSO (57° N, 12° E), is analysed. The retrieved vertical profiles are compared with co-located CO and O3 data from the MLS instrument on the Aura satellite. The data sets from the instruments agree well with each other. The main differences are the higher OSO volume mixing ratios of O3 in the upper mesosphere during the winter nights and the higher OSO volume mixing ratios of CO in the mesosphere during the winter. The low bias of mesospheric winter values of CO from MLS compared to ground-based instruments was reported earlier.
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5.
  • Hassona, Ahmed Adel, 1988, et al. (författare)
  • A Low-loss D-band Chip-to-Waveguide Transition Using Unilateral Fin-line Structure
  • 2018
  • Ingår i: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. ; 2018, s. 390-393
  • Konferensbidrag (refereegranskat)abstract
    • This paper presents a D-band interconnect realized using unilateral finline structure. The interconnect consists of a microstrip line implemented on a 75μm-thick SiC substrate. The line then couples to a unilateral finline taper that is mounted in the E-plane of a standard WR-6.5 D-band waveguide. The interconnect achieves low insertion loss and covers very wide frequency range. The measured minimum insertion loss is 0.67 dB and the maximum is 2 dB per transition across the entire D-band covering the frequency range 110-170 GHz. The transition does not require any galvanic contacts nor any special processing and can be implemented in any of the commercially available semiconductor technologies. This solution provides low-loss wideband packaging technique that enables millimeter-wave systems assembly using a high-performance simple approach.
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6.
  • Hassona, Ahmed Adel, 1988, et al. (författare)
  • A non-galvanic D-band MMIC-to-waveguide transition using eWLB packaging technology
  • 2017
  • Ingår i: 2017 IEEE MTT-S International Microwave Symposium (IMS). - : Institute of Electrical and Electronics Engineers (IEEE). - 0149-645X. - 9781509063604 ; , s. 510-512
  • Konferensbidrag (refereegranskat)abstract
    • This paper presents a novel D-band interconnect implemented in a low-cost embedded Wafer Level Ball Grid Array (eWLB) commercial process. The non-galvanic transition is realized through a slot antenna directly radiating to a standard air filled waveguide. The interconnect achieves low insertion loss and relatively wide bandwidth. The measured average insertion loss is 3 dB across a bandwidth of 22% covering the frequency range 110138 GHz. The measured average return loss is -10 dB across the same frequency range. Adopting the low-cost eWLB process and standard waveguides makes the transition an attractive solution for interconnects beyond 100 GHz. This solution enables mm-wave system on chip (SoC) to be manufactured and assembled in high volumes cost effectively. To the authors' knowledge, this is first attempt to fabricate a packaging solution beyond 100 GHz using eWLB technology.
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7.
  • Hassona, Ahmed Adel, 1988, et al. (författare)
  • D-band Waveguide Transition Based on Linearly Tapered Slot Antenna
  • 2017
  • Ingår i: 2017 IMAPS Nordic Conference on Microelectronics Packaging (NordPac). - 9781538630556 ; , s. 64-67
  • Konferensbidrag (refereegranskat)abstract
    • In this work, an on-chip Monolithic Microwave Integrated Circuit (MMIC) to waveguide transition is realized based on Linearly Tapered Slot antenna (LTSA) structure. The antenna is implemented on a 50-um-thick Gallium Arsenide (GaAs) substrate and placed in the E-plane of an air-filled D-band waveguide. The transition shows a maximum insertion loss of 1 dB across the frequency range 110-170 GHz. The average return loss of the transition is -15 dB and the minimum is -9 dB. The structure occupies an area of 0.82x0.6 mm2. The transition provides low-loss wide-band connectivity for millimeter-wave systems and addresses integration challenges facing systems operating beyond 100 GHz.
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8.
  • Hassona, Ahmed Adel, 1988, et al. (författare)
  • Demonstration of +100-GHz Interconnects in eWLB Packaging Technology
  • 2019
  • Ingår i: IEEE Transactions on Components, Packaging and Manufacturing Technology. - 2156-3985 .- 2156-3950. ; 9:7, s. 1406-1414
  • Tidskriftsartikel (refereegranskat)abstract
    • This paper presents waveguide interconnects implemented in an embedded wafer level ball grid array (eWLB) packaging technology. The interconnects operate at D-band (110–170 GHz), hence are enabling the realization and commercialization of high-data-rate systems. The interconnects rely on implementing radiating structures on the technology’s redistribution layers instead of using conventional ball grid arrays for the transmission of the RF signal to/from the package. The interconnects interface with standard WR-6.5 waveguides. Moreover, they do not require any galvanic contacts with the waveguide. The interconnects achieve a measured insertion loss of 2.8 dB over a bandwidth of 33%. The adopted eWLB packaging technology is suitable for low-cost high-volume production and allows heterogeneous integration with other technologies. This paper proposes cost-effective high-performance interconnects for THz integration, thus addressing one of the main challenges facing systems operating beyond 100 GHz.
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9.
  • Hassona, Ahmed Adel, 1988, et al. (författare)
  • F-band Low-loss Tapered Slot Transition for Millimeter-wave System Packaging
  • 2019
  • Ingår i: 2019 49th European Microwave Conference, EuMC 2019. - 9782874870552 ; , s. 432-435
  • Konferensbidrag (refereegranskat)abstract
    • This work presents a packaging solution at F-band (90 - 140 GHz) using on-chip waveguide transition. The transition is realized using a Linearly Tapered Slot (LTS) implemented in a commercial Gallium Arsenide (GaAs) Monolithic Microwave Integrated Circuit (MMIC) technology. The LTS is mounted in the E-plane of a split-block waveguide module and fed through a microstrip line. The transition is experimentally verified using a back-to-back test structure and it exhibits an average insertion loss of 1.7 dB over the frequency range extending from 100 to 135 GHz. This work presents an on-chip packaging technique to realize the interface between MMICs and standard waveguides at millimeter-wave (mmW) frequencies and hence addressing one of the main integration challenging facing systems operating at that range.
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10.
  • Hassona, Ahmed Adel, 1988, et al. (författare)
  • Silicon Taper Based D-Band Chip to Waveguide Interconnect for Millimeter-Wave Systems
  • 2017
  • Ingår i: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 27:12, s. 1092-1094
  • Tidskriftsartikel (refereegranskat)abstract
    • This letter presents a novel interconnect for coupling millimeter-wave (mmW) signals from integrated circuits to air-filled waveguides. The proposed solution is realized through a slot antenna implemented in embedded wafer level ball grid array (eWLB) process. The antenna radiates into a high-resistivity (HR) silicon taper perpendicular to its plane, which in turn radiates into an air-filled waveguide. The interconnect achieves a measured average insertion loss of 3.4 dB over the frequency range of 116-151 GHz. The proposed interconnect is generic and does not require any galvanic contacts. The utilized eWLB packaging process is suitable for low-cost high-volume production and allows heterogeneous integration with other technologies. This letter proposes a straightforward cost-effective high-performance interconnect for mmW integration, and thus, addressing one of the main challenges facing systems operating beyond 100 GHz.
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