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Träfflista för sökning "WFRF:(Wellmann J) srt2:(2010-2014)"

Sökning: WFRF:(Wellmann J) > (2010-2014)

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2.
  • Hens, Philip, et al. (författare)
  • Freestanding 3C-SiC grown by sublimation epitaxy using 3C-SiC templates on silicon
  • 2012
  • Ingår i: Materials Science Forum Vols 717 - 720. - : Trans Tech Publications Inc.. ; , s. 177-180
  • Konferensbidrag (refereegranskat)abstract
    • In this work a new approach for the production of freestanding cubic silicon carbide (3C-SiC) in (001) orientation is presented which is based on the combination of chemical vapor deposition (CVD) and the fast sublimation growth process (FSGP). Fast homoepitaxial growth of 3C-SiC using sublimation epitaxy on a template created by CVD growth on silicon substrates allows to obtain thick freestanding material with low defect densities. Using standard silicon wafers as substrate material permits a cost efficient process and the applying of wafers with different orientations. The (001) orientation used in this work will potentially allow further heteroepitaxial growth of other cubic semiconductors, like e.g. gallium nitride (GaN).
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3.
  • Syväjärvi, Mikael, et al. (författare)
  • Fluorescent SiC as a new material for white LEDs
  • 2012
  • Ingår i: Physica scripta. T. - 0281-1847 .- 0031-8949 .- 1402-4896. ; T148, s. 014002-
  • Tidskriftsartikel (refereegranskat)abstract
    • Current III–V-based white light-emitting diodes (LEDs) are available. However, their yellow phosphor converter is not efficient at high currents and includes rare-earth metals, which are becoming scarce. In this paper, we present the growth of a fluorescent silicon carbide material that is obtained by nitrogen and boron doping and that acts as a converter using a semiconductor. The luminescence is obtained at room temperature, and shows a broad luminescence band characteristic of donor-to-acceptor pair recombination. Photoluminescence intensities and carrier lifetimes reflect a sensitivity to nitrogen and boron concentrations. For an LED device, the growth needs to apply low-off-axis substrates. We show by ultra-high-resolution analytical transmission electron microscopy using aberration-corrected electrons that the growth mechanism can be stable and that there is a perfect epitaxial relation from the low-off-axis substrate and the doped layer even when there is step-bunching.
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