| 1. |
- Amundadottir, Laufey, et al.
(författare)
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Genome-wide association study identifies variants in the ABO locus associated with susceptibility to pancreatic cancer.
- 2009
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Ingår i: Nature Genetics. - : Springer Science and Business Media LLC. - 1061-4036 .- 1546-1718. ; 41, s. 986-990
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Tidskriftsartikel (refereegranskat)abstract
- We conducted a two-stage genome-wide association study of pancreatic cancer, a cancer with one of the lowest survival rates worldwide. We genotyped 558,542 SNPs in 1,896 individuals with pancreatic cancer and 1,939 controls drawn from 12 prospective cohorts plus one hospital-based case-control study. We conducted a combined analysis of these groups plus an additional 2,457 affected individuals and 2,654 controls from eight case-control studies, adjusting for study, sex, ancestry and five principal components. We identified an association between a locus on 9q34 and pancreatic cancer marked by the SNP rs505922 (combined P = 5.37 x 10(-8); multiplicative per-allele odds ratio 1.20; 95% confidence interval 1.12-1.28). This SNP maps to the first intron of the ABO blood group gene. Our results are consistent with earlier epidemiologic evidence suggesting that people with blood group O may have a lower risk of pancreatic cancer than those with groups A or B.
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| 2. |
- Shiu, Jin-Yu, 1978, et al.
(författare)
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Oxygen Ion Implantation Isolation Planar Process for AlGaN/GaN HEMTs
- 2007
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Ingår i: IEEE Electron Device Letters. ; 28:6, s. 476-478
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Tidskriftsartikel (refereegranskat)abstract
- A multienergy oxygen ion implantation process wasdemonstrated to be compatible with the processing of highpower microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density of 5.3 W/mm at Vgs = −4 V and Vds = 50 V and a maximum power added efficiency of 51.5% at Vgs = −4 V and Vds = 30 V at 3 GHz were demonstrated on HEMTs withoutfield plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhancedgate leakage due to the gate contacting the 2-D electron gas at themesa sidewall.
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| 3. |
- Desmaris, Vincent, 1977, et al.
(författare)
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Influence of oxynitride (SiOxNy) passivation on the microwave performance of AlGaN/GaN HEMTs
- 2008
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Ingår i: Solid-State Electronics. ; 52, s. 632-636
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Tidskriftsartikel (refereegranskat)abstract
- The effects of the composition of oxynitride passivations (SiOxNy) deposited by plasma enhanced chemical-vapor deposition (PECVD) at room temperature on the microwave performance of AlGaN/GaN high electron mobility transistors (HEMTs) were investigated. Five different SiOxNy passivating layers were deposited covering the whole range of dielectrics combinations from SiOx to SiNy. Their impacts on the HEMT performance were studied by means of DC, S-parameters, pulsed IV and load-pull measurements. The oxynitride dielectric with a refraction index of 1.58 was shown to be an effective SiOxNy passivation for limiting the gate-lag effects in the HEMTs and at the same time increasing the breakdown voltage of the device. It is thus a promising passivation layer for microwave power high voltage and high power applications.
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| 4. |
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| 5. |
- Shiu, Jin-Yu, 1978, et al.
(författare)
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Comparison of the DC and microwave performance of AlGaN/GaN HEMTs with sputter PVD or plasma enhanced CVD grown silicon nitride (SiNx) passivation layer
- 2006
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Ingår i: WOCSDICE 2006 Proceedings, Fiskebäckskil 2006.
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Konferensbidrag (refereegranskat)abstract
- Sputter and plasma enhanced chemical vapor deposition (PECVD) processed SiNx passivation layer on AlGaN/GaN high electron mobility transistors (HEMTs) was compared in this investigation. The both samples were process on the same wafer and the same process besides the passivation process in the same batch. From the data of DC, mimicked class B quiescent bias point pulse measurement, transient pulse measurement are showing that the sputter passivation HEMTs have better performance because there are fewer surface traps. The power sweep data from load pull measurement were in accordance with the pulsed measurement data. Without cooling, continuous wave power densities of 4W/mm and 3.1W/mm was measured at 3GHz on the sputter and PECVD passivation HEMTs, respectively.
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| 6. |
- Shiu, Jin-Yu, 1978, et al.
(författare)
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DC and microwave performance of AlGaN/GaN HEMTs passivated with sputtered SiNx
- 2007
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Ingår i: Semicronductor Science and Technology. ; 22, s. 717-721
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Tidskriftsartikel (refereegranskat)abstract
- The effects of sputtered and room temperature plasma enhanced chemical vapour deposition (RT-PECVD) SiNx passivation on the dc and microwave performance of AlGaN/GaN high electron mobility transistors (HEMTs)are studied. The pulsed I–V characteristics from a class B quiescent bias point and transient measurements indicate that the sputtered SiNx passivation is more efficient in suppressing lag effects in AlGaN/GaN HEMTs. Dispersion-free sputtered SiNx passivated AlGaN/GaN HEMTs were obtained using this technique. Continuous-wave (CW) measurements without active cooling give a maximum output power density of 6.6 W mm−1 at Vgs=−4 V, Vds = 50 V and a maximum power added efficiency of 51.3% at Vgs=−4 V, Vds = 30 V at 3 GHz on 2 × 50 μmAlGaN/GaN HEMTs on the sapphire substrate, with a gate length of 2 μm and without field-plated gates. To the best of our knowledge, this is the highest level power density reported on the sapphire substrate without field-plate design. The extrinsic cut-off frequency ( ft) and maximumoscillation frequency ( fmax) are 51 GHz and 100 GHz, respectively, on 2 × 50 × 0.15 μm HEMTs. To our knowledge, the sputtered SiNx passivation for AlGaN/GaN HEMTs is a unique technique, which has never beenpublished before.
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| 7. |
- Szatmari, Peter, et al.
(författare)
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Mapping autism risk loci using genetic linkage and chromosomal rearrangements.
- 2007
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Ingår i: Nature Genetics. - : Springer Science and Business Media LLC. - 1061-4036 .- 1546-1718. ; 39:3, s. 319-328
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Tidskriftsartikel (refereegranskat)abstract
- Autism spectrum disorders (ASDs) are common, heritable neurodevelopmental conditions. The genetic architecture of ASDs is complex, requiring large samples to overcome heterogeneity. Here we broaden coverage and sample size relative to other studies of ASDs by using Affymetrix 10K SNP arrays and 1,168 families with at least two affected individuals, performing the largest linkage scan to date while also analyzing copy number variation in these families. Linkage and copy number variation analyses implicate chromosome 11p12-p13 and neurexins, respectively, among other candidate loci. Neurexins team with previously implicated neuroligins for glutamatergic synaptogenesis, highlighting glutamate-related genes as promising candidates for contributing to ASDs.
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