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- Adler, SS, et al.
(författare)
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Double helicity asymmetry in inclusive midrapidity pi(0) production for polarized p+p collisions at root s=200 GeV
- 2004
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Ingår i: Physical Review Letters. - 1079-7114. ; 93:20: 202002
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Tidskriftsartikel (refereegranskat)abstract
- We present a measurement of the double longitudinal spin asymmetry in inclusive pi(0) production in polarized proton-proton collisions at roots=200 GeV. The data were taken at the Relativistic Heavy Ion Collider with average beam polarizations of 0.27. The measurements are the first in a program to study the longitudinal spin structure of the proton, using strongly interacting probes, at collider energies. The asymmetry is presented for transverse momenta 1-5 GeV/c at midrapidity, where next-to-leading-order perturbative quantum chromodynamic (NLO pQCD) calculations well describe the unpolarized cross section. The observed asymmetry is small and is compared to a NLO pQCD calculation with a range of polarized gluon distributions.
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| 4. |
- Jarmar, T., et al.
(författare)
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Germanium-induced texture and preferential orientation of NiSi1-xGex layers on Si1-xGex
- 2004
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 70:23, s. 1-11
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Tidskriftsartikel (refereegranskat)abstract
- NiSi1-xGex films on compressively strained as well as relaxed undoped Si1-xGex epitaxially grown substrates with x=0.06-0.30 on Si(001) wafers have been studied with respect to the relative orientation of film and substrate after annealing at temperatures in the range 400-850 degreesC. Using x-ray diffraction, transmission electron microscopy, and pole-figure measurements, it was found that only the monogermanosilicide phase formed above 450 degreesC and was the only phase still at 850 degreesC. New information regarding the effects of Ge on the silicidation of Ni was also found. Thus, the preferred plane parallel to the surface is (013). Compared to NiSi, Ge suppresses the development of the other planes parallel to the surface except (013). Within this plane, the orientations of the grains pile up in such a way that the configuration NiSi1-xGex[100]//Si1-xGex[100] is avoided, which in the pole-figures leads to broad peaks in-between the substrate [100] and [010]. In addition, peaks indicating the epitaxial alignment NiSi0.8Ge0.2(+/-21-1) or (+/-2-11)//Si0.8Ge0.2(+/-2+/-20) coupled with NiSi0.8Ge0.2(+/-100)approximate to//Si0.8Ge0.2(+/-100) or (0+/-10) were found. Fine structure in the broad peaks is found to be due to lateral epitaxial alignments between grains along their common grain boundary. Based on the nonexistence of NiGe2, the observations are interpreted in terms of Ge preventing the formation of certain Ni-Ge bonds at the interface between NiSi1-xGex and the Si1-xGex substrate.
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| 7. |
- Li, H. Y., et al.
(författare)
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Properties of a dinuclear Mn(III,III) complex with a tri-phenolate ligand N4O3 (3-) and a new complex containing a ligand covalently linked to ruthenium tris-bipyridine
- 2004
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Ingår i: Huaxue xuebao. - 0567-7351. ; 62:9, s. 916-922
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Tidskriftsartikel (refereegranskat)abstract
- A new high valent complex [Mn-2(III, III)L(mu-OAc)(2)].PF6 (2a) was prepared, where L was the trianion of 2, 6-bis {[(2-hydroxy-5-tert-butylbenzyl) (pyridyl-2-methyl)-amino]-methyl}-4-methylphenol, which contains two additional phenolate groups and two tert-butyl groups compared to its parent [Mn-2(II, II)(bpmp)(mu-OAc)(2)].ClO4 (1). These improvements narrowed the disparity between the new model and (Mn)(4) cluster (OEC in nature). Moreover, L was modified to be covalently linked with Ru(II) tris-bipyridine through an amide bond to construct a complex 2b for the study of photoinduced electron transfer (PET). UV-vis, IR, emission spectra and electrochemistry were used to investigate their photochemistry properties. The results showed that 2b has good photochemistry properties and the E-1/2 of Ru3+/Ru2+ was higher than those of phenol(+)/phenol and Mn(III, IV)/Mn(III, III). After coordination of manganese ions, the electron transfer process in the model complex conforms to the basic principles of electron donor side of photosystem II (PS II) in nature.
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| 8. |
- Seger, Johan, et al.
(författare)
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Influence of a Si layer intercalated between Si0.75Ge0.25 and Ni on the behavior of the resulting NiSi1-uGeu film
- 2004
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 96:12, s. 7179-7182
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Tidskriftsartikel (refereegranskat)abstract
- The interaction of Ni films with epitaxially grown Si-capped and not capped Si0.75Ge0.25 layers on Si(100) at 500degreesC leads to the formation of NiSi1-uGeu films as a bilayer NiSi on NiSi0.75Ge0.25 with a rather clear compositional boundary. In the absence of a Si cap at the surface, NiSi0.75Ge0.25 is formed on NiSi. Epitaxy of NiSi on NiSi0.75Ge0.25, and vice versa, occurs across the compositional boundary. The crystallographic orientation of the NiSi1-uGeu films is strongly affected by the initial layer thicknesses and the layer sequence. Without a Si cap, the NiSi1-uGeu films show an increased fiber texture with increasing Si0.75Ge0.25 thickness. In the presence of a Si cap, on the other hand, the texture collapses into a random orientation already for thin caps. Rapid diffusion of Ge at 500degreesC results in the presence of some Ge at the NiSi/Si interface for a NiSi0.75Ge0.25/NiSi/Si structure. This diffusion is accompanied by an increased roughness at the NiSi/Si interface, as compared to the quite flat NiSi/Si interface in the absence of Ge. For thin Si caps, severe interface roughening with thick NiSi0.75Ge0.25 grains protruding deeply into the remaining Si0.75Ge0.25 is observed.
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