| 31. |
- Zhang, J. G., et al.
(författare)
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Microstructure and mechanical properties of spray formed ultrahigh-carbon steels
- 2004
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Ingår i: Materials Science & Engineering. - : Elsevier BV. - 0921-5093 .- 1873-4936. ; 383:1, s. 45-49
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Tidskriftsartikel (refereegranskat)abstract
- The microstructure and mechanical properties of the spray formed 1.25C-3.0Si-1.5Cr ultrahigh-carbon steel (UHCS) were described. The 1.25C-3.0Si-1.5Cr UHCS was processed by spray forming to break up carbide networks. The fine pearlites with average interlamellar spacing of 0.20 mum was observed in the as-sprayed microstructure. The ultimate tensile strength and the pearlite spacing can be related by the Hall-Petch equation. The as-sprayed 1.25C-3.0Si-1.5Cr UHCS consisting of fine lamellar pearlites has been shown to exhibit superplastic behavior at elevated temperature. The dramatic change of microstructure from fine lamellar pearlites to equiaxed grains stabilized by spheroidized particles during superplastic deformation has been observed. The estimation on the basis of thermodynamics shows that the content of chromium of 1.54 wt.% is needed to inhibit graphite formation in the l.25C-3.OSi-1.5Cr UHCS.
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| 32. |
- Zhang, L., et al.
(författare)
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Transition from triple helix to coil of Lentinan in solution measured by SEC, viscometry, and C-13 NMR
- 2002
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Ingår i: Polymer journal. - : Springer Science and Business Media LLC. - 0032-3896 .- 1349-0540. ; 34:6, s. 443-449
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Tidskriftsartikel (refereegranskat)abstract
- Lentinan, beta-(1 --> 3)-D-glucan with (1 --> 6) branching, was isolated from Lentinus edodes. Weight-average molecular weight M-w radius of gyration < s(2) > (1/2) and intrinsic viscosity [eta] of Lentinan in 0.2 M NaCl aqueous solution, dimethylsulfoxide (DMSO) and water/DMSO mixtures were measured by light scattering (LS), size exclusion chromatography (SEC) combined with LS, and viscometry. The results indicated that the glucan exists mainly as triple-helical chains in 0.2 M NaCl aqueous solution and water/DMSO mixtures with over 20 wt% water content, and as single-flexible chain in DMSO. The data from SEC-LS, viscosity and C-13 NMR measurements proved strongly that the helix-coil conformation transition occurred in a narrow range from 80 to 85 wt% DMSO aqueous solution, accompanying with obvious changes of M-w, < s(2) >(1/2)(z), [eta] as well as signals of C6 and C6(s). The transition of Lentinan in water/DMSO mixture was irreversible. The difference in C-13 NMR spectra for the triple-helical and coil conformations was the disappearance of the signals of C3 in beta-(1 --> 3)- linked backbone and the enhancement in relative intensities of glucose substituted C6s in the helix state, as well as the appearance of an asymmetric and broad peak of C6 in the intermediate of the conformation change. This suggests that the immobilization of the backbone by binding with intra and intermolecular hydrogen bonds resulted in the loss of the signals of its carbon atoms in the triple helix state. An overcoating cylinder model composed of the beta-(1 --> 3)- linked backbone as helix core and the side chains as rotatable overcoat was proposed to illustrate the triple-helical conformation and its transition in the solution.
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| 33. |
- Zhang, S, et al.
(författare)
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Gene variation of 5'-NCR and core region in serum samples collected from patients with HCV infection
- 2000
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Ingår i: Zhonghua gan zang bing za zhi. Chinese journal of hepatology. - 1007-3418. ; 8:3, s. 144-146
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Tidskriftsartikel (refereegranskat)abstract
- OBJECTIVE: To study the variation of HCV 5'-NCR and core gene in serial sera collected from patients with HCV infection. METHODS: Serial sera were collected from 4 plasma-donors with HCV infection. 5'-NCR and core gene were amplified, sequenced and analyzed using software. RESULTS: All the sequences obtained from the serial sera of patients with HCV infection were 1b and 2a subtypes. The variation of 5'-NCR only related to the genotype, and not associated with patients and time of serum collection. However, the sequences of core gene were not identical in HCV strains isolated from different patients. The sequences of those two regions of the same genotype isolated from the same patient did not change with time. CONCLUSION: 5'-NCR is more conserved than the core region and the genotype is the major cause of gene variation. No change in sequences of those two regions is found at the different points of time.
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| 34. |
- Zhang, Shi-Li, et al.
(författare)
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Differences between interfacial and surface molybdenum in the formation Of TiSi2
- 2001
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 89:3, s. 1641-1646
-
Tidskriftsartikel (refereegranskat)abstract
- Backscattering and diffraction results are presented for the effects of an interfacial or a surface Mo layer on the formation of Ti-silicides during solid-state interaction between Ti films and Si substrates. It is shown that the interfacial and surface Mo are fundamentally different in their involvement in the Ti-silicide formation. The interfacial Mo induces the formation of C40 (Mo,Ti)Si-2 at the interface adjacent to the Si substrate already after annealing at 550 degreesC, in agreement with our previous results. Hence, the desired C54 TiSi2 can grow directly on top of the C40 (Mo,Ti)Si-2 at relatively low temperatures as a result of the template effect. The surface Mo is, however, found in a metal-rich silicide presumably (Mo,Ti)(5)Si-3 at 550-600 degreesC, which eventually converts to (Mo,Ti)Si-2 upon annealing at higher temperatures. Underneath this metal-rich silicide lies a fully developed C49 TiSi2 layer. Consequently, the formation of C54 TiSi2 in the presence of surface Mo follows the usual path of the C49-C54 phase transition. This important difference in the participation of Mo in the silicide formation spreads doubts about the validity of using interfacial Mo versus surface Mo to study the dominant mechanism(s) responsible for the enhanced formation of C54 TiSi2.
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| 35. |
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| 36. |
- Zhang, Zhibin, et al.
(författare)
-
Different routes to the formation of C54TiSi(2) in the presence of surface and interface molybdenum : A transmission electron microscopy study
- 2002
-
Ingår i: Journal of Materials Research. - 0884-2914 .- 2044-5326. ; 17:4, s. 784-789
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Tidskriftsartikel (refereegranskat)abstract
- Direct evidence revealing fundamental differences in sequence of phase formation during the growth of TiSi2 in the presence of an ultrathin surface or interface Mo layer is presented. Results of cross-sectional transmission electron microscopy showed that when the Mo layer was present at the interface between Ti films and Si substrates, C40 (Mo,Ti)Si-2 formed at the interface, and Ti5Si3 grew on top after annealing at 550 degreesC. Additionally, both C54 and C40 TiSi2 were found in the close vicinity of the C40 (Mo,Ti)Si-2 grains. No C49 grains were detected. Raising the annealing temperature to 600 degreesC led to the formation of C54 TiSi2 at the expense of Ti5Si3, and the interfacial C40 (Mo,Ti)Si-2 also began to transform into C54 (Mo,Ti)Si-2 at 600 degreesC. When the Mo was deposited on top of Ti, the silicide film was almost solely composed of C49 TiSi2 at 600 degreesC. However, a small amount of (Mo,Ti)(5)Si-3 was still present in the vicinity of the sample surface. Upon annealing at 650 degreesC, only the C54 phase was found throughout the entire TiSi2 layer with a surface (Mo,Ti)Si, on top of TiSi2 Hence, it was unambiguously shown that in the presence of surface versus interface Mo, different routes were taken to the formation of C54 TiSi2.
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| 37. |
- Zhang, Zhibin, et al.
(författare)
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Formation of C54TiSi(2) on Si(100) using Ti/Mo and Mo/Ti bilayers
- 2002
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Ingår i: International Journal of Modern Physics B. - 0217-9792. ; 16:1-2, s. 205-212
-
Tidskriftsartikel (refereegranskat)abstract
- The effect of Mo on the formation of C54 TiSi2 on Si (100) substrates is studied using crosssectional transmission electron microscopy. For a Ti/Mo bilayer on Si, the interfacial Mo film reacts with Ti and Si to form C40 (Mo,Ti)Si-2 at 550 degreesC. Crystal grains of metastable C40 TiSi2 and equilibrium C54 TiSi2 are found in the region near the interfacial (Mo,Ti)Si-2 layer due to the template phenomenon. Increasing the temperature to 600 degreesC leads to the growth of C54 TiSi2 throughout the film. No C49 grains can be detected. The findings confirm that the usual sequence for the formation of C54 TiSi2, i.e. the C49 TiSi2 forms first followed by a phase transition to the C54 TiSi2, is altered by the interposed Mo layer. For a Mo/Ti bilayer on Si, the surface Mo layer is found to be present sequentially in (Mo,Ti)(5)Si-3 at 550 degreesC, C49 (Mo,Ti)Si-2 at 600 degreesC and C54 (Mo,Ti)Si-2 at 650 degreesC. The bulk Ti beneath forms the C54 TiSi2 following the usual route through the C49-C54 phase transition. However, this transition is now enhanced, in comparison with the C54 TiSi2 formation with pure Ti, by the C54 (Mo,Ti)Si-2 atop that plays the role as a template precisely as the interfacial C40 (Mo,Ti)Si-2.
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| 38. |
- Zhang, Z. G, et al.
(författare)
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Radiative properties of EuII and EuIII obtained from lifetime and branching ratio measurements
- 2000
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Ingår i: Journal of Physics B: Atomic, Molecular and Optical Physics. - : IOP Publishing. - 0953-4075 .- 1361-6455. ; 33:3, s. 521-526
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Tidskriftsartikel (refereegranskat)abstract
- Radiative lifetimes of nine levels in Eu II (4f(7)6p, 4f(6)5d6s and 4f(6)5d(2)) and Eu III (4f(6)5d) have been measured using time-resolved laser-induced fluorescence spectroscopy on a laser-produced europium plasma. Oscillator strengths for a number of Eu II lines have been derived by combining the lifetimes with branching ratios measured in the emission spectrum of a hollow-cathode lamp.
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| 39. |
- Zhou, J., et al.
(författare)
-
Self-excited piezoelectric microcantilever for gas detection
- 2003
-
Ingår i: Microelectronic Engineering. - 0167-9317 .- 1873-5568. ; 69:1, s. 37-46
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Tidskriftsartikel (refereegranskat)abstract
- Design, fabrication and results from theoretical and experimental studies on the self-excited piezoelectric microcantilever are presented in this paper. Theoretical studies have been carried out to design the microcantilever and have been extended to harmonic analysis using the finite element technique. Silicon microfabrication has been successfully completed to create microcantilever devices. Experimental studies have been performed to obtain the resonance frequencies. Applied as a mass-sensitive sensor, the microcantilever has a sensitivity of - 0.0024%/ppm and a minimum mass loading of 3.5 x 10(-9) g with the help of a zeolite sensitive layer to freon.
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| 40. |
- Aberg, J, et al.
(författare)
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Electrical properties of the TiSi2-Si transition region in contacts : The influence of an interposed layer of Nb
- 2001
-
Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 90:5, s. 2380-2388
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Tidskriftsartikel (refereegranskat)abstract
- The influence of an interposed ultrathin Nb layer between Ti and Si on the silicide formation and the electrical contact between the silicide formed and the Si substrate is investigated. The presence of the Nb interlayer results in the formation of ternary alloy (Nb,Ti)Si-2 in the C40 crystallographic structure adjacent to the Si substrate. Depending on the nature of the Si substrates and/or the amount of the initial Nb, the interfacial C40 (Nb,Ti)Si-2 leads, in turn, to either epitaxial growth of a highly faulted metastable C40 TiSi2 or formation of the desired C54 TiSi2 at a lower temperature than needed for it to form in reference samples with Ti deposited directly on Si. On p-type substrates doped to various concentrations, the Nb also leads to a considerably lower specific contact resistivity than that obtained in the reference samples: a twofold to fourfold reduction in the contact resistivity is found using cross-bridge Kelvin structures in combination with two-dimensional numerical simulation. As C40 (Nb,Ti)Si-2 forms at the interface when an interfacial Nb is present, the interface characterized is likely to represent the one between (Nb,Ti)Si-2 and Si. For the reference samples, the interface studied is between TiSi2 and Si.
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