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Träfflista för sökning "WFRF:(Zhao JH) srt2:(2000-2004)"

Sökning: WFRF:(Zhao JH) > (2000-2004)

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1.
  • Zhao, QX, et al. (författare)
  • Nonradiative centers in InAs dots grown on GaAs substrates for 1.3 mu m emission
  • 2003
  • Ingår i: Physics Letters A. - : Elsevier Science B.V., Amsterdam.. - 0375-9601 .- 1873-2429. ; 315:02-Jan, s. 150-155
  • Tidskriftsartikel (refereegranskat)abstract
    • Nonradiative centers in InAs dots grown on GaAs substrates are investigated in this study. The emission from InAs dots close to 1.3 mum is monitored under different excitation densities and different excitation energy. The used samples were also treated by hydrogen plasma in order to suppress the nonradiative centers. The purpose of this work is to study how nonradiative centers influence the efficiency of InAs dots emission and whether the nonradiative centers can be reduced. Our results clearly illustrate that there indeed exist nonradiative centers, both at the interface between the InAs dots and surrounding layers and in the GaAs layers, which can be suppressed by H-treatments. A technique to estimate relative amount of nonradiative centers is also discussed.
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2.
  • Zhao, QX, et al. (författare)
  • Strong enhancement of the photoluminescence-efficiency from InAs quantum dots
  • 2003
  • Ingår i: Journal of Applied Physics. - : American Institute of Physics. - 0021-8979 .- 1089-7550. ; 93:3, s. 1533-1536
  • Tidskriftsartikel (refereegranskat)abstract
    • InAs quantum dots (QDs) have been investigated using optical spectroscopy, in order to understand the experimental observation of strong enhancement of their photoluminescence efficiency. When a tunneling barrier is introduced between the, InAs layer and the GaAs cap layer, the intensity of the InAs QD emission increases by more than an order of magnitude at the excitation density of 60 W/cm(2). The enhancement of the optical recombination efficiency is due to the suppression of the nonradiative transitions in the wetting layer. The strong enhancement of the InAs emission can lead to an increase in the optical gain of the InAs laser structure
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Sadeghi, M (2)
Willander, Magnus (2)
Wang, SM (2)
Yang, JH (2)
Zhao, QX (2)
Wei, YQ (2)
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Ferdos, F (1)
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Linköpings universitet (2)
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2003 (2)

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