| 1. |
- Melvås, Patrik, et al.
(författare)
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A free-hanging strain-gauge for ultraminiaturized pressure sensors
- 2002
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Ingår i: Sensors and Actuators, A: Physical. ; 97-98, s. 75-82
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Tidskriftsartikel (refereegranskat)abstract
- The first entirely surface micromachined free-hanging strain-gauge pressure sensor is presented. The sensing element consists of a 80 pm long H-shaped force transducing beam supported at both ends. The H-shape enables the strain-gauge to be a part of the beam without the need for additional layers. The beam is located beneath and attached at one end to a square polysilicon diaphragm and at the other end to the cavity edge. The diaphragm of the fabricated sensor is 2 mum thick and has a side length of only 100 mum. The new design enables a combination of high pressure sensitivity and miniature chip size as well as good environmental isolation. The pressure sensitivity of the sensor with a H-shaped 0.4 mum thick force transducing beam was measured to be 5 muV/V/mmHg.
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| 2. |
- van der Wijngaart, Wouter, et al.
(författare)
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A high-stroke, high-pressure electrostatic actuator for valve applications
- 2002
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Ingår i: Sensors and Actuators, A: Physical. ; 100:2-3, s. 264-271
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Tidskriftsartikel (refereegranskat)abstract
- This paper presents a novel large-stroke electrostatic valve actuator for high-pressure applications. The combination of pressure balancing and flexible electrode structures ensures large flow gaps at a low actuation voltage. A simulation tool was built to evaluate the design parameters. Design specific, as well as general optimisations are performed. The model shows a 5.6 times (theoretical) performance improvement compared to earlier designs. A micromachined test structure was fabricated and evaluated. Measurement results are presented and discussed.
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| 3. |
- Asplund, Carl, et al.
(författare)
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1260 nm InGaAs vertical-cavity lasers
- 2002
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Ingår i: Electronics Letters. - 0013-5194. ; 38:13, s. 635-636
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Tidskriftsartikel (refereegranskat)abstract
- The fabrication and performance of highly strained double-quantum well InGaAs/GaAs vertical-cavity lasers with record-long emission wavelength of 1260 nm at room temperature is reported. Depending on device diameter, the minimum threshold current is in the low mA-regime while the maximum output power exceeds 1 mW. The devices work continuous-wave over a wide temperature range of at least 10-120degrees C.
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| 4. |
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| 5. |
- Eriksson, Fredrik, et al.
(författare)
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Enhanced soft x-ray reflectivity of Cr/Sc multilayers by ion-assisted sputter deposition
- 2002
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Ingår i: Optical Engineering : The Journal of SPIE. - 0091-3286. ; 41:11, s. 2903-2909
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Tidskriftsartikel (refereegranskat)abstract
- Cr/Sc multilayers have been grown on Si substrates using dc magnetron sputtering. The multilayers are intended as condenser mirrors in a soft x-ray microscope operating at the wavelength 3.374 nm. They were designed for normal reflection of the first and second orders, with multilayer periods of 1.692 and 3.381 nm, and layer thickness ratios of 0.471 and 0.237, respectively. At-wavelength soft-x-ray reflectivity measurements were carried out using a reflectometer with a compact soft-x-ray laser-plasma source. The multilayers were irradiated during growth with Ar ions, varying both in energy (9 to 113 eV) and flux, in order to stimulate the adatom mobility and improve the interface flatness. It was found that to obtain a maximum soft x-ray reflectivity with a low flux (Cr=0.76, Sc=2.5) of Ar ions a rather high energy of 53 eV was required. Such energy also caused intermixing of the layers. By the use of a solenoid surrounding the substrate, the arriving ion-to-metal flux ratio could be increased 10 times and the required ion energy could be decreased. A high flux (Cr=7.1, Sc=23.1) of low-energy (9 eV) Ar ions yielded the most favorable growth condition, limiting the intermixing with a subsistent good surface flatness. © 2002 Society of Photo-Optical Instrumentation Engineers.
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| 6. |
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| 7. |
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| 8. |
- Griss, Patrick, et al.
(författare)
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Micromachined Barbed Spikes for Mechanical Chip Attachment
- 2002
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Ingår i: Sensors and Actuators A. ; 95, s. 94-99
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Tidskriftsartikel (refereegranskat)abstract
- We investigated the mechanical attachment of chips to surfaces capable of being penetrated by silicon spike,,. The attachment principle is inspired by fishhooks and arrows. Barbed spikes penetrate a material but offer resistance to detaching forces. Two types of barbed spikes were etched in silicon using deep reactive ion etching (DRIE). The mechanical attachment of both types of barbed spike arrays was measured on non-biological materials (polyethylene foil (PE), aluminium foil and Parafilm(TM)) as well as on human skin. The maximum adhesion force was 1.36 N achieved by a 2 x 2 mm(2) chip containing 64 barbed spikes, 160 mum in length, pressed into PE. Maximum adhesion in skin was 0.54 N. The shape of the two different barb types has significant influence on the detachment forces for non-biological materials.
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| 9. |
- Hallen, A., et al.
(författare)
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Ion implantation of silicon carbide
- 2002
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Ingår i: Nuclear Instruments and Methods in Physics Reseach B. - 0168-583X. ; 186:1-4, s. 186-194
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Tidskriftsartikel (refereegranskat)abstract
- Ion implantation is an important technique for a successful implementation of commercial SiC devices. Much effort has also been devoted to optimising implantation and annealing parameters to improve the electrical device characteristics. However, there is a severe lack of understanding of the fundamental implantation process and the generation and annealing kinetics of point defects and defect complexes. Only very few of the most elementary intrinsic point defects have been unambiguously identified so far. To reach a deeper understanding of the basic mechanisms SiC samples have been implanted with a broad range of ions, energies, doses, etc., and the resulting defects and damage produced in the lattice have been studied with a multitude of characterisation techniques. In this contribution we will review some of the results generated recently and also try to indicate where more research is needed. In particular, deep level transient spectroscopy (DLTS) has been used to investigate point defects at very low doses and transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS) are used for studying the damage build-up at high doses. © 2002 Elsevier Science B.V. All rights reserved.
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| 10. |
- Hammarén, Maria
(författare)
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Att se förvandling
- 2002
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Ingår i: Det industriella Sverige. Kunskapsarvet 1897-2002. - Stockholm : Dialoger. ; s. 8-13
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Bokkapitel (övrigt vetenskapligt)
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