| 1. |
- Abbasi, Mazhar Ali, et al.
(författare)
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Decoration of ZnO nanorods with coral reefs like NiO nanostructures by the hydrothermal growth method and their luminescence study
- 2014
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Ingår i: Materials. - : MDPI. - 1996-1944. ; 7:1, s. 430-440
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Tidskriftsartikel (refereegranskat)abstract
- Composite nanostructures of coral reefs like p-type NiO on n-type ZnO nanorods have been decorate on fluorine-doped tin oxide glass substrates by the hydrothermal growth. Structural characterization was performed by field emission scanning electron microscopy, high-resolution transmission electron microscopy and X-ray diffraction techniques. This investigation has shown that the adopted synthesis has led to high crystalline quality nanostructures. Morphological study shows that the coral reefs like nanostructures are densely packed on the ZnO nanorods. Cathodoluminescence (CL) spectra for the synthesized composite nanostructures were dominated by a near band gap emission at 380 nm and by a broad interstitial defect related luminescence centered at ~630 nm. Spatially resolved CL images reveal that the luminescence originates mainly from the ZnO nanorods.
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| 2. |
- Abom, A.E., et al.
(författare)
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Characterization of the metal-insulator interface of field-effect chemical sensors
- 2003
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 93:12, s. 9760-9768
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Tidskriftsartikel (refereegranskat)abstract
- The metal-insulator interface of hydrogen-sensitive metal-insulator-semiconductor capacitors, with SiO2 as the insulator and Pt as the metal contact, was discussed. It was found that the difference in hydrogen response between differently prepared devices was explained by a difference in concentration of available adsorption sites. The analysis showed that the concentration of Pt atoms in contact with the oxide affected both the hydrogen response and the metal-oxide adhesion.
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| 3. |
- Abom, A.E., et al.
(författare)
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Experimental evidence for a dissociation mechanism in NH3 detection with MIS field-effect devices
- 2003
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Ingår i: Sensors and actuators. B, Chemical. - 0925-4005 .- 1873-3077. ; 89:1-2
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Tidskriftsartikel (refereegranskat)abstract
- The gas response mechanism of ammonia detection with Pt-based metal-insulator-semiconductor (MIS) field-effect sensors was investigated. An experimental model system was designed which compares the responses of thick continuous Pt layers with controlled morphology and surface chemical composition, with the response of thin, discontinuous layers. The surface of a thick, continuous sputter-deposited Pt film is modified, either by (i) the deposition of a thin SiO2 overlayer, (ii) reactive sputter deposition of PtOx, or (iii) co-deposition of Pt with SiO2 in Ar + O2 atmospheres. We show that the ammonia response is caused by the formation of atomic hydrogen through the dissociation of NH3 at temperatures <200 °C. It is found that the modified surfaces exhibit increased ammonia selectivity compared to a pure Pt film. Results from this work indicate that the reason for the changed selectivity is the appearance of an oxidized PtOx phase or triple phase boundaries between Pt, SiO2 and the ambient gas, rather than for solely morphological reasons. © 2002 Elsevier Science B.V. All rights reserved.
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| 4. |
- Abom, A.E., et al.
(författare)
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Influence of gate metal film growth parameters on the properties of gas sensitive field-effect devices
- 2002
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Ingår i: Thin Solid Films. - 0040-6090 .- 1879-2731. ; 409:2, s. 233-242
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Tidskriftsartikel (refereegranskat)abstract
- Thin films of Pt have been grown as gate metals on the oxide surface of gas sensitive field-effect devices. Both electron beam evaporation and dc magnetron sputtering has been used. The energy of the impinging Pt atoms, the substrate temperature and the thickness of the Pt film were used as parameters in this study. The influence of the growth parameters on the gas response has been investigated and compared with the properties of the films, studied by transmission electron microscopy, Auger electron spectroscopy, X-ray photoelectron spectroscopy and X-ray diffraction. The conditions during growth of the Pt film are found to have a large impact on the properties of the device. As expected, crystallinity, morphology and the metal/substrate interfacial structure are also affected by processing parameters. Three different growth processes stand out as the most promising from gas sensor considerations, namely room temperature evaporation, sputtering at high pressures and sputtering at high temperatures. The correlation between gas responses and properties of the gas sensitive layer is discussed. © 2002 Elsevier Science B.V. All rights reserved.
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| 5. |
- Abom, A.E., et al.
(författare)
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Thin oxide films as surface modifiers of MIS field effect gas sensors
- 2002
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Ingår i: Sensors and actuators. B, Chemical. - 0925-4005 .- 1873-3077. ; 85:1-2, s. 109-119
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Tidskriftsartikel (refereegranskat)abstract
- The catalytic activity at the surface of Pt based MIS field effect gas sensors is modified by the deposition of thin films of SnO2, Al2O3 and SiO2, grown by reactive sputtering. It is found that a very thin layer (<10 nm) of SiO2 and SnO2 changes the catalytic activity towards higher NH3 selectivity, but with thicker films the sensor response vanishes. Since the response mechanism for these sensors is dependent on dissociation of molecules, it is likely that at low temperatures (140 °C), neither dissociation on nor transport/diffusion through the thicker films takes place. However, with Pt in conjunction with SiO2 or SnO2, the surface reactions will be altered, with enhanced NH3 selectivity as a result. A thin film of Al2O3, on the other hand, has a much smaller influence on the gas response to the test gases used in this work. Furthermore the sputtering process is found to strongly influence the sensor responses, and specifically reduce the sensitivity of the sensor. A thin intermediate layer of evaporated Pt does not completely protect the underlying structure from sputter induced damage. © 2002 Elsevier Science B.V. All rights reserved.
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| 6. |
- Abrikosov, Igor, et al.
(författare)
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Phase Stability and Elasticity of TiAlN
- 2011
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Ingår i: Materials. - : MDPI. - 1996-1944. ; 4:9, s. 1599-1618
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Tidskriftsartikel (refereegranskat)abstract
- We review results of recent combined theoretical and experimental studies of Ti1−xAlxN, an archetypical alloy system material for hard-coating applications. Theoretical simulations of lattice parameters, mixing enthalpies, and elastic properties are presented. Calculated phase diagrams at ambient pressure, as well as at pressure of 10 GPa, show a wide miscibility gap and broad region of compositions and temperatures where the spinodal decomposition takes place. The strong dependence of the elastic properties and sound wave anisotropy on the Al-content offers detailed understanding of the spinodal decomposition and age hardening in Ti1−xAlxN alloy films and multilayers. TiAlN/TiN multilayers can further improve the hardness and thermal stability compared to TiAlN since they offer means to influence the kinetics of the favorable spinodal decomposition and suppress the detrimental transformation to w-AlN. Here, we show that a 100 degree improvement in terms of w-AlN suppression can be achieved, which is of importance when the coating is used as a protective coating on metal cutting inserts.
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| 7. |
- Adamovic, Dragan, et al.
(författare)
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Enhanced intra- and interlayer mass transport on Pt(111) via 5 - 50 eV Pt atom impacts on two-dimensional Pt clusters
- 2006
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 515:4, s. 2235-2243
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Tidskriftsartikel (refereegranskat)abstract
- Embedded-atom molecular dynamics simulations were used to investigate the effects of low-energy (5–50 eV) normally-incident self-ion irradiation of two-dimensional compact Pt3, Pt7, Pt19, and Pt37 clusters on Pt(111). We follow atomistic pathways leading to bombardment-induced intra- and interlayer mass transport. The results can be described in terms of three impact energy regimes. With E ≤ 20 eV, we observe an increase in 2D island dimensions and negligible residual point defect formation. As the impact energy is raised above 20 eV, we observe an increase in irradiation-induced lateral mass transport, a decrease in island size, and the activation of interlayer processes. For E ≥ 35 eV, this trend continues, but point defects, in the form of surface vacancies, are also formed. The results illustrate the richness of the dynamical interaction mechanisms occurring among incident energetic species, target clusters, and substrate atoms, leading to island preservation, reconfiguration, disruption and/or residual point defects formation. We discuss the significance of these results in terms of thin film growth.
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| 8. |
- Adamovic, Dragan, 1973-, et al.
(författare)
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Kinetic pathways leading to layer-by-layer growth from hyperthermal atoms : A Multibillion time step molecular dynamics study
- 2007
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - : American Physical Society. - 1098-0121 .- 1550-235X. ; 76, s. 115418-115425
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Tidskriftsartikel (refereegranskat)abstract
- We employ multibillion time step embedded-atom molecular dynamics simulations to investigate the homoepitaxial growth of Pt(111) from hyperthermal Pt atoms (EPt=0.2–50eV) using deposition fluxes approaching experimental conditions. Calculated antiphase diffraction intensity oscillations, based on adatom coverages as a function of time, reveal a transition from a three-dimensional multilayer growth mode with EPt<20eV to a layer-by-layer growth with EPt≥20eV. We isolate the effects of irradiation-induced processes and thermally activated mass transport during deposition in order to identify the mechanisms responsible for promoting layer-by-layer growth. Direct evidence is provided to show that the observed transition in growth modes is primarily due to irradiation-induced processes which occur during the 10ps following the arrival of each hyperthermal atom. The kinetic pathways leading to the transition involve both enhanced intralayer and interlayer adatom transport, direct incorporation of energetic atoms into clusters, and cluster disruption leading to increased terrace supersaturation.
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| 9. |
- Adamovic, Dragan, et al.
(författare)
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Low-energy ion irradiation during film growth: Kinetic pathways leading to enhanced adatom migration rates
- 2005
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 86, s. 211915-
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Tidskriftsartikel (refereegranskat)abstract
- Embedded-atom molecular dynamics simulations are used to investigate the effects of low-energy self-ion irradiation of Pt adatoms on Pt(111). Here, we concentrate on self-bombardment dynamics, i.e., isolating and monitoring the atomic processes, induced by normally incident Pt atoms with energies E ranging from 5 to 50 eV, that can affect intra- and interlayer mass transport.. We find that adatom scattering, surface channeling, and dimer formation occur at all energies. Atomic intermixing events involving incident and terrace atoms are observed at energies 15 eV, while the collateral formation of residual surface vacancies is observed only with E>40 eV. The overall effect of low-energy self-ion irradiation is to enhance lateral adatom and terrace atom migration. ©2005 American Institute of Physics
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| 10. |
- Alami, Jones, et al.
(författare)
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High-power impulse magnetron sputtering of Ti-Si-C thin films from a Ti3SiC2 compound target
- 2006
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Ingår i: Thin Solid Films. - : Institutionen för fysik, kemi och biologi. - 0040-6090 .- 1879-2731. ; 515:4, s. 1731-1736
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Tidskriftsartikel (refereegranskat)abstract
- We have deposited Ti-Si-C thin films using high-power impulse magnetron sputtering (HIPIMS) from a Ti3SiC2 compound target. The as-deposited films were composite materials with TiC as the main crystalline constituent. X-ray diffraction and photoelectron spectroscopy indicated that they also contained amorphous SiC, and for films deposited on inclined substrates, crystalline Ti5Si3Cx. The film morphology was dense and flat, while films deposited with dc magnetron sputtering under comparable conditions were rough and porous. Due to the high degree of ionization of the sputtered species obtained in HIPIMS, it is possible to control the film composition, in particular the C content, by tuning the substrate inclination angle, the Ar process pressure, and the bias voltage.
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