| 1. |
- Jafari Jam, Reza, et al.
(författare)
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III-V nanowire synthesis by use of electrodeposited gold particles
- 2015
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Ingår i: Nano letters (Print). - Washington, DC : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 15:1, s. 134-138
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Tidskriftsartikel (refereegranskat)abstract
- Semiconductor nanowires are great candidates for building novel electronic devices. Considering the cost of fabricating such devices, substrate reuse and gold consumption are the main concerns. Here we report on implementation of high throughput gold electrodeposition for selective deposition of metal seed particles in arrays defined by lithography for nanowire synthesis. By use of this method, a reduction in gold consumption by a factor of at least 300 was achieved, as compared to conventional thermal evaporation for the same pattern. Because this method also facilitates substrate reuse, a significantly reduced cost of the final device is expected. We investigate the morphology, crystallography, and optical properties of InP and GaAs nanowires grown from electrodeposited gold seed particles and compare them with the properties of nanowires grown from seed particles defined by thermal evaporation of gold. We find that nanowire synthesis, as well as the material properties of the grown nanowires are comparable and quite independent of the gold deposition technique. On the basis of these results, electrodeposition is proposed as a key technology for large-scale fabrication of nanowire-based devices.
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| 2. |
- Borschel, Christian, et al.
(författare)
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A New Route toward Semiconductor Nanospintronics : Highly Mn-Doped GaAs Nanowires Realized by Ion-Implantation under Dynamic Annealing Conditions
- 2011
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Ingår i: Nano letters (Print). - Washington : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 11:9, s. 3935-3940
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Tidskriftsartikel (refereegranskat)abstract
- We report on highly Mn-doped GaAs nanowires (NWs) of high crystalline quality fabricated by ion beam implantation, a technique that allows doping concentrations beyond the equilibrium solubility limit. We studied two approaches for the preparation of Mn-doped GaAs NWs: First, ion implantation at room temperature with subsequent annealing resulted in polycrystalline NWs and phase segregation of MnAs and GaAs. The second approach was ion implantation at elevated temperatures. In this case, the single-crystallinity of the GaAs NWs was maintained, and crystalline, highly Mn-doped GaAs NWs were obtained. The electrical resistance of such NWs dropped with increasing temperature (activation energy about 70 meV). Corresponding magnetoresistance measurements showed a decrease at low temperatures, indicating paramagnetism. Our findings suggest possibilities for future applications where dense arrays of GaMnAs nanowires may be used as a new kind of magnetic material system.
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| 3. |
- Chalangar, Ebrahim, PhD student, 1984-, et al.
(författare)
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Nanopatterned rGO/ZnO : Al seed layer for vertical growth of single ZnO nanorods
- 2023
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Ingår i: Nanotechnology. - Bristol : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 34:25, s. 1-7
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Tidskriftsartikel (refereegranskat)abstract
- In this work, we demonstrate a novel low-cost template-assisted route to synthesize vertical ZnO nanorod arrays on Si (100). The nanorods were grown on a patterned double seed layer comprised of reduced graphene oxide (rGO) and Al-doped ZnO nanoparticles. The seed layer was fabricated by spray-coating the substrate with graphene and then dip-coating it into a Al-doped ZnO sol-gel solution. The growth template was fabricated from a double-layer resist, spin-coated on top of the rGO/ZnO:Al seed layer, and patterned by colloidal lithography. The results show a successful chemical bath deposition of vertically aligned ZnO nanorods with controllable diameter and density in the nanoholes in the patterned resist mask. Our novel method can presumably be used to fabricate electronic devices on virtually any smooth substrate with a thermal budget of 1 min at 300 °C with the seed layer acting as a conductive strain-relieving back contact. The top contact can simply be made by depositing a suitable transparent conductive oxide or metal, depending on the specific application. © 2023 The Author(s). Published by IOP Publishing Ltd.
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| 4. |
- Hoglund, L, et al.
(författare)
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Selective optical doping to predict the performance and reveal the origin of photocurrent peaks in quantum dots-in-a-well infrared photodetectors
- 2009
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Ingår i: INFRARED PHYSICS and TECHNOLOGY. - Exeter : Elsevier BV. - 1350-4495 .- 1879-0275. ; 52:6, s. 272-275
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Tidskriftsartikel (refereegranskat)abstract
- Resonant optical pumping across the band gap was used as artificial doping in InAs/In0.15Ga0.85As/GaAs quantum dots-in-a-well infrared photodetectors. Through efficient filling of the quantum dot energy levels by simultaneous optical pumping into the ground states and the excited states of the quantum dots, the response was increased by a factor of 10. Low temperature photocurrent peaks observed at 120 and 148 meV were identified as intersubband transitions emanating from the quantum dot ground state and the quantum dot excited state, respectively by a selective increase of the electron population in the different quantum dot energy levels.
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| 5. |
- Höglund, Linda, 1974-, et al.
(författare)
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Bias and temperature dependence of the escape processes in quantum dots-in-a-well infrared photodetectors
- 2008
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Ingår i: Applied Physics Letters. - New York : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 93:10, s. 103501-
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Tidskriftsartikel (refereegranskat)abstract
- The performance of quantum dots-in-a-well infrared photodetectors (DWELL IPs) has been studied by means of interband and intersubband photocurrent measurements as well as dark current measurements. Using interband photocurrent measurements, substantial escape of electrons from lower lying states in the DWELL structure at large biases was revealed. Furthermore, a significant variation in the escape probability from energy states in the DWELL structure with applied bias was observed. These facts can explain the strong temperature and bias dependence of both photocurrent and dark currents in DWELL IPs.
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| 6. |
- Höglund, Linda, 1974-, et al.
(författare)
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Bias mediated tuning of the detection wavelength in asymmetrical quantum dots-in-a-well infrared photodetectors
- 2008
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Ingår i: Applied Physics Letters. - New York : AIP Publishing. - 0003-6951 .- 1077-3118. ; 93:20
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Tidskriftsartikel (refereegranskat)abstract
- Bias-mediated tuning of the detection wavelength within the infrared wavelength region is demonstrated for quantum dots-in-a-well and dots-on-a-well infrared photodetectors. By positioning the InAs quantum dot layer asymmetrically in an 8 nm wide In0.15Ga0.85As/GaAs quantum well, a shift in the peak detection wavelength from 8.4 to 10.3 mu m was observed when reversing the polarity of the applied bias. For a dots-on-a-well structure, the peak detection wavelength was tuned from 5.4 to 8 mu m with small changes in the applied bias. These tuning properties could be essential for applications such as modulators and dual-color infrared detection.
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| 7. |
- Höglund, Linda, 1974-, et al.
(författare)
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Origin of photocurrent in lateral quantum dots-in-a-well infrared photodetectors
- 2006
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Ingår i: Applied Physics Letters. - New York : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 88:21
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Tidskriftsartikel (refereegranskat)abstract
- Interband and intersubband transitions of lateral InAs/In0.15Ga0.85As dots-in-a-well quantum dot infrared photodetectors were studied in order to determine the origin of the photocurrent. The main intersubband transition contributing to the photocurrent (PC) was associated with the quantum dot ground state to the quantum well excited state transition. By a comparison between intersubband PC measurements and the energy level scheme of the structure, as deduced from Fourier transform photoluminescence (FTPL) and FTPL excitation spectroscopies, the main transition contributing to the PC was identified.
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| 8. |
- Jeddi Abdarloo, Hossein, Doktorand, 1992-, et al.
(författare)
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Enhanced LWIR response of InP/InAsP quantum discs-in-nanowire array photodetectors by photogating and ultra-thin ITO contacts
- 2024
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Ingår i: Nanotechnology. - Bristol : Institute of Physics Publishing (IOPP). - 0957-4484 .- 1361-6528. ; 35:21, s. 1-7
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Tidskriftsartikel (refereegranskat)abstract
- Here we report on an experimental and theoretical investigation of the long-wavelength infrared (LWIR) photoresponse of photodetectors based on arrays of three million InP nanowires with axially embedded InAsP quantum discs. An ultra-thin top indium tin oxide contact combined with a novel photogating mechanism facilitates an improved LWIR normal incidence sensitivity in contrast to traditional planar quantum well photodetectors. The electronic structure of the quantum discs, including strain and defect-induced photogating effects, and optical transition matrix elements were calculated by an 8-band k center dot p simulation along with solving drift-diffusion equations to unravel the physics behind the generation of narrow linewidth intersubband signals observed from the quantum discs © 2024 The Author(s). Published by IOP Publishing Ltd.
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| 9. |
- Liu, Ruisheng, et al.
(författare)
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Large magnetoresistance in Co/Ni/Co ferromagnetic single electron transistors
- 2007
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Ingår i: Applied Physics Letters. - New York : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 90:12, s. 123111-
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Tidskriftsartikel (refereegranskat)abstract
- The authors report on magnetotransport investigations of nanoscaled ferromagnetic Co/Ni/Co single electron transistors. As a result of reduced size, the devices exhibit single electron transistor characteristics at 4.2 K. Magnetotransport measurements carried out at 1.8 K reveal tunneling magnetoresistance (TMR) traces with negative coercive fields, which the authors interpret in terms of a switching mechanism driven by the shape anisotropy of the central wirelike Ni island. A large TMR of about 18% is observed within a finite source-drain bias regime. The TMR decreases rapidly with increasing bias, which the authors tentatively attribute to excitation of magnons in the central island.
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| 10. |
- Liu, Ruisheng, et al.
(författare)
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Nanoscaled ferromagnetic single electron transistors
- 2007
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Ingår i: [Host publication title missing]. - Piscataway, N.J. : IEEE Press. ; 1-3, s. 420-423, s. 420-421
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Konferensbidrag (övrigt vetenskapligt/konstnärligt)abstract
- We report on a summary of fabricating and characterizing nanoscaled ferromagnetic single-electron transistors (F-SETs). One type of device is assembled with an atomic force microscope. A single 30 nm Au disc, forming the central island of the transistor, is manipulated with Angstrom precision into the gap between plasma oxidized Ni source and drain electrodes which are designed with different geometries to facilitate magnetic moment reversal at different magnetic fields. The tunnel resistances can be tuned in real-time during the device fabrication by re-positioning the An disc. A second type of device with Co electrodes and a central Au island is fabricated using a high-precision alignment procedure invoked during e-beam writing. Both devices exhibit single-electron transistor characteristics at 4.2K. From magnetotransport measurements carried out at 1.7K, we found that it is more efficient to realize spin injection and detection in Co/Au/Co devices fabricated with the second technique. A maximum TMR of about 4% was observed in these devices.
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