| 1. |
- Sjöqvist, Erik, et al.
(författare)
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Conceptual aspects of geometric quantum computation
- 2016
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Ingår i: Quantum Information Processing. - : Springer Science and Business Media LLC. - 1570-0755 .- 1573-1332. ; 15:10, s. 3995-4011
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Tidskriftsartikel (refereegranskat)abstract
- Geometric quantum computation is the idea that geometric phases can be used to implement quantum gates, i.e., the basic elements of the Boolean network that forms a quantum computer. Although originally thought to be limited to adiabatic evolution, controlled by slowly changing parameters, this form of quantum computation can as well be realized at high speed by using nonadiabatic schemes. Recent advances in quantum gate technology have allowed for experimental demonstrations of different types of geometric gates in adiabatic and nonadiabatic evolution. Here, we address some conceptual issues that arise in the realizations of geometric gates. We examine the appearance of dynamical phases in quantum evolution and point out that not all dynamical phases need to be compensated for in geometric quantum computation. We delineate the relation between Abelian and non-Abelian geometric gates, and find an explicit physical example where the two types of gates coincide. We identify differencies and similarities between adiabatic and nonadiabatic realizations of quantum computation based on non-Abelian geometric phases.
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| 2. |
- Azimi Mousolou, Vahid, et al.
(författare)
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Spin-electric Berry phase shift in triangular molecular magnets
- 2016
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Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 94:23
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Tidskriftsartikel (refereegranskat)abstract
- We propose a Berry phase effect on the chiral degrees of freedom of a triangular magnetic molecule. The phase is induced by adiabatically varying an external electric field in the plane of the molecule via a spin-electric coupling mechanism present in these frustrated magnetic molecules. The Berry phase effect depends on spin-orbit interaction splitting and on the electric dipole moment. By varying the amplitude of the applied electric field, the Berry phase difference between the two spin states can take any arbitrary value between zero and π, which can be measured as a phase shift between the two chiral states by using spin-echo techniques. Our result can be used to realize an electric-field-induced geometric phase-shift gate acting on a chiral qubit encoded in the ground-state manifold of the triangular magnetic molecule.
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| 3. |
- Azimi Mousolou, Vahid, et al.
(författare)
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Non-Abelian off-diagonal geometric phases in nano-engineered four-qubit systems
- 2013
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Ingår i: Europhysics letters. - : IOP Publishing. - 0295-5075 .- 1286-4854. ; 103:6, s. 60011-
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Tidskriftsartikel (refereegranskat)abstract
- The concept of off-diagonal geometric phase (GP) has been introduced in order to recover interference information about the geometry of quantal evolution where the standard GPs are not well-defined. In this Letter, we propose a physical setting for realizing non-Abelian off- diagonal GPs. The proposed non-Abelian off-diagonal GPs can be implemented in a cyclic chain of four qubits with controllable nearest-neighbor interactions. Our proposal seems to be within reach in various nano-engineered systems and therefore opens up for first experimental test of the non-Abelian off-diagonal GP.
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| 4. |
- Azimi Mousolou, Vahid, et al.
(författare)
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Universal Non-adiabatic Holonomic Gates in Quantum Dots and Single-Molecule Magnets
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Annan publikation (övrigt vetenskapligt/konstnärligt)abstract
- Geometric manipulation of a quantum system offers a method for fast, universal, and robust quantum information processing. Here, we propose a scheme for universal all-geometric quantum computation using non-adiabatic quantum holonomies. We propose three different realizations of the scheme based on an unconventional use of quantum dot and single-molecule magnet devices,which offer promising scalability and robust efficiency.
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| 5. |
- Azimi Mousolou, Vahid, et al.
(författare)
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Universal Non-adiabatic Holonomic Gates in Quantum Dots and Single-Molecule Magnets
- 2014
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Ingår i: New Journal of Physics. - : IOP Publishing. - 1367-2630. ; 16
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Tidskriftsartikel (refereegranskat)abstract
- Geometric manipulation of a quantum system offers a method for fast, universal, and robust quantum information processing. Here, we propose a scheme for universal all-geometric quantum computation using non-adiabatic quantum holonomies. We propose three different realizations of the scheme based on an unconventional use of quantum dot and single-molecule magnet devices, which offer promising scalability and robust efficiency.
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| 6. |
- Borschel, Christian, et al.
(författare)
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A New Route toward Semiconductor Nanospintronics : Highly Mn-Doped GaAs Nanowires Realized by Ion-Implantation under Dynamic Annealing Conditions
- 2011
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Ingår i: Nano letters (Print). - Washington : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 11:9, s. 3935-3940
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Tidskriftsartikel (refereegranskat)abstract
- We report on highly Mn-doped GaAs nanowires (NWs) of high crystalline quality fabricated by ion beam implantation, a technique that allows doping concentrations beyond the equilibrium solubility limit. We studied two approaches for the preparation of Mn-doped GaAs NWs: First, ion implantation at room temperature with subsequent annealing resulted in polycrystalline NWs and phase segregation of MnAs and GaAs. The second approach was ion implantation at elevated temperatures. In this case, the single-crystallinity of the GaAs NWs was maintained, and crystalline, highly Mn-doped GaAs NWs were obtained. The electrical resistance of such NWs dropped with increasing temperature (activation energy about 70 meV). Corresponding magnetoresistance measurements showed a decrease at low temperatures, indicating paramagnetism. Our findings suggest possibilities for future applications where dense arrays of GaMnAs nanowires may be used as a new kind of magnetic material system.
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| 7. |
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| 8. |
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| 9. |
- Liu, Ruisheng S., et al.
(författare)
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Magnetoresistance studies on CoAl OX Au and CoAl OX NiAu tunnel structures
- 2008
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Ingår i: Applied Physics Letters. - New York : American Institute of Physics (AIP). - 0003-6951 .- 1077-3118. ; 93:20, s. 203107-203107-3
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Tidskriftsartikel (refereegranskat)abstract
- We report on magnetoresistance (MR) studies on CoAl OX Au and CoAl OX NiAu magnetic tunnel junctions. In spite of the fact that the difference between the two samples is merely a 3 nm thick Ni layer, there is a sharp contrast in MR behavior indicating that the electronic structure at the interface between the ferromagnetic electrodes and the insulating barrier dominates the MR signal. The former sample exhibits a clear tunneling anisotropic MR (TAMR), with the characteristic correlation between resistance and current direction, in contrast to the latter sample which displays a conventional tunneling MR (TMR) dominated by the relative orientation between the magnetization directions of the two electrodes. In addition, the TAMR has a much stronger temperature dependence than the TMR, indicating a much faster drop-off of the tunneling density of states anisotropy than the tunneling electron spin polarization with increasing temperature. Finally, we propose a possible simple way to distinguish TAMR from normal TMR by measuring the resistance of the device at different angles of the external magnetic field. 2008 American Institute of Physics.
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| 10. |
- Liu, Ruisheng, et al.
(författare)
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Tunneling anisotropic magnetoresistance in Co/AlOx/Au tunnel junctions
- 2008
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Ingår i: Nano letters (Print). - Washington : American Chemical Society. - 1530-6984 .- 1530-6992. ; 8:3, s. 848-852
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Tidskriftsartikel (refereegranskat)abstract
- We observe spin-valve-like effects in nanoscaled thermally evaporated Co/AlOx/Au tunnel junctions. The tunneling magnetoresistance is anisotropic and depends on the relative orientation of the magnetization direction of the Co electrode with respect to the current direction. We attribute this effect to a two-step magnetization reversal and an anisotropic density of states resulting from spin-orbit interaction. The results of this study points to future applications of novel spintronics devices involving only one ferromagnetic layer.
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