| 1. |
- Dorsch, Sven, et al.
(författare)
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Gate control, g factors, and spin-orbit energy of p -type GaSb nanowire quantum dot devices
- 2021
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Ingår i: Physical Review B. - 2469-9950. ; 103:24
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Tidskriftsartikel (refereegranskat)abstract
- Proposals for quantum information applications are frequently based on the coherent manipulation of spins confined to quantum dots. For these applications, p-type III-V material systems promise a reduction of the hyperfine interaction while maintaining large g factors and strong spin-orbit interaction. In this Letter, we study bottom-gated device architectures to realize single and serial multiquantum dot systems in Schottky-contacted p-type GaSb nanowires. We find that the effect of potentials applied to gate electrodes on the nanowire is highly localized to the immediate vicinity of the gate electrode only, which prevents the formation of double quantum dots with commonly used device architectures. We further study the transport properties of a single quantum dot induced by bottom gating and find large gate-voltage dependent variations of the g∗ factors up to 8.1±0.2 as well as spin-orbit energies between 110 and 230 μeV.
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| 2. |
- Khan, Waqar, et al.
(författare)
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Efficient and continuous microwave photoconversion in hybrid cavity-semiconductor nanowire double quantum dot diodes
- 2021
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Ingår i: Nature Communications. - : Springer Science and Business Media LLC. - 2041-1723. ; 12:1
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Tidskriftsartikel (refereegranskat)abstract
- Converting incoming photons to electrical current is the key operation principle of optical photodetectors and it enables a host of emerging quantum information technologies. The leading approach for continuous and efficient detection in the optical domain builds on semiconductor photodiodes. However, there is a paucity of efficient and continuous photon detectors in the microwave regime, because photon energies are four to five orders of magnitude lower therein and conventional photodiodes do not have that sensitivity. Here we tackle this gap and demonstrate how microwave photons can be efficiently and continuously converted to electrical current in a high-quality, semiconducting nanowire double quantum dot resonantly coupled to a cavity. In particular, in our photodiode device, an absorbed photon gives rise to a single electron tunneling through the double dot, with a conversion efficiency reaching 6%.
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| 3. |
- Tizno, Ofogh, et al.
(författare)
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Radial tunnel diodes based on InP/InGaAs core-shell nanowires
- 2017
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 110:11
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Tidskriftsartikel (refereegranskat)abstract
- We report on the fabrication and characterization of radial tunnel diodes based on InP(n+)/InGaAs(p+) core-shell nanowires, where the effect of Zn-dopant precursor flow on the electrical properties of the devices is evaluated. Selective and local etching of the InGaAs shell is employed to access the nanowire core in the contact process. Devices with an n+-p doping profile show normal diode rectification, whereas n+-p+ junctions exhibit typical tunnel diode characteristics with peak-to-valley current ratios up to 14 at room temperature and 100 at 4.2 K. A maximum peak current density of 28 A/cm2 and a reverse current density of 7.3 kA/cm2 at VSD = −0.5 V are extracted at room temperature after normalization with the effective junction area.
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| 4. |
- Mårtensson, Thomas, et al.
(författare)
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Epitaxial Growth of Indium Arsenide Nanowires on Silicon Using Nucleation Templates Formed by Self-Assembled Organic Coatings
- 2007
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Ingår i: Advanced Materials. - : Wiley. - 1521-4095 .- 0935-9648. ; 19, s. 1801-1801
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Tidskriftsartikel (refereegranskat)abstract
- Indium arsenide nanowires are grown directly on silicon substrates (see figure and cover) using a method employing self-assembled organic coatings to create oxide-based growth templates. High-performance materials, such as InAs, could have great impact on future nanoelectronics if integrated with Si, but integration has so far been hard to realize with other methods.
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| 5. |
- Webb, James, et al.
(författare)
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High resolution scanning gate microscopy measurements on InAs/GaSb nanowire Esaki diode devices
- 2014
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Ingår i: Nano Reseach. - : Springer Science and Business Media LLC. - 1998-0124 .- 1998-0000. ; 7:6, s. 877-887
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Tidskriftsartikel (refereegranskat)abstract
- Gated transport measurements are the backbone of electrical characterization of nanoscale electronic devices. Scanning gate microscopy (SGM) is one such gating technique that adds crucial spatial information, accessing the localized properties of semiconductor devices. Nanowires represent a central device concept due to the potential to combine very different materials. However, SGM on semiconductor nanowires has been limited to a resolution in the 50-100 nm range. Here, we present a study by SGM of newly developed III-V semiconductor nanowire InAs/GaSb heterojunction Esaki tunnel diode devices under ultra-high vacuum. Sub-5 nm resolution is demonstrated at room temperature via use of quartz resonator atomic force microscopy sensors, with the capability to resolve InAs nanowire facets, the InAs/GaSb tunnel diode transition and nanoscale defects on the device. We demonstrate that such measurements can rapidly give important insight into the device properties via use of a simplified physical model, without the requirement for extensive calculation of the electrostatics of the system. Interestingly, by precise spatial correlation of the device electrical transport properties and surface structure we show the position and existence of a very abrupt (<10 nm) electrical transition across the InAs/GaSb junction despite the change in material composition occurring only over 30-50 nm. The direct and simultaneous link between nanostructure composition and electrical properties helps set important limits for the precision in structural control needed to achieve desired device performance.
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| 6. |
- Aspegren, Markus, et al.
(författare)
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Perfect Zeeman Anisotropy in Rotationally Symmetric Quantum Dots with Strong Spin-Orbit Interaction
- 2024
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Ingår i: Nano Letters. - 1530-6984. ; 24:26, s. 7927-7933
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Tidskriftsartikel (refereegranskat)abstract
- In nanoscale structures with rotational symmetry, such as quantum rings, the orbital motion of electrons combined with a spin-orbit interaction can produce a very strong and anisotropic Zeeman effect. Since symmetry is sensitive to electric fields, ring-like geometries provide an opportunity to manipulate magnetic properties over an exceptionally wide range. In this work, we show that it is possible to form rotationally symmetric confinement potentials inside a semiconductor quantum dot, resulting in electron orbitals with large orbital angular momentum and strong spin−orbit interactions. We find complete suppression of Zeeman spin splitting for magnetic fields applied in the quantum dot plane, similar to the expected behavior of an ideal quantum ring. Spin splitting reappears as orbital interactions are activated with symmetry-breaking electric fields. For two valence electrons, representing a common basis for spin-qubits, we find that modulating the rotational symmetry may offer new prospects for realizing tunable protection and interaction of spin-orbital states.
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| 7. |
- Barker, David, et al.
(författare)
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Experimental Verification of the Work Fluctuation-Dissipation Relation for Information-to-Work Conversion
- 2022
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Ingår i: Physical Review Letters. - 0031-9007. ; 128:4
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Tidskriftsartikel (refereegranskat)abstract
- We study experimentally work fluctuations in a Szilard engine that extracts work from information encoded as the occupancy of an electron level in a semiconductor quantum dot. We show that as the average work extracted per bit of information increases toward the Landauer limit Formula Presented, the work fluctuations decrease in accordance with the work fluctuation-dissipation relation. We compare the results to a protocol without measurement and feedback and show that when no information is used, the work output and fluctuations vanish simultaneously, contrasting the information-to-energy conversion case where increasing amount of work is produced with decreasing fluctuations. Our study highlights the importance of fluctuations in the design of information-to-work conversion processes.
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| 8. |
- Björk, Mikael, et al.
(författare)
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Nanowire resonant tunneling diodes
- 2002
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:23, s. 4458-4460
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Tidskriftsartikel (refereegranskat)abstract
- Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/mum(2) was observed at low temperatures. (C) 2002 American Institute of Physics.
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| 9. |
- Björk, Mikael, et al.
(författare)
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One-dimensional heterostructures in semiconductor nanowhiskers
- 2002
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 80:6, s. 1058-1060
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Tidskriftsartikel (refereegranskat)abstract
- We report on the growth of designed heterostructures placed within semiconductor nanowhiskers, exemplified by the InAs/InP material system. Based on transmission electron microscopy, we deduce the interfaces between InAs and InP to be atomically sharp. Electrical measurements of thermionic emission across an 80-nm-wide InP heterobarrier, positioned inside InAs whiskers 40 nm in diameter, yield a barrier height of 0.6 eV. On the basis of these results, we propose new branches of physics phenomena as well as new families of device structures that will now be possible to realize and explore.
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| 10. |
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