Nano-Schottky contacts realized by bottom-up technique

• Here we present a comprehensive study of a rectifying nano-Schottky contact formed at the interface between a gold catalytic particle and an epitaxially grown GaInAs/InAs nanowire. Selective electrical connections formed by electron beam lithography to the catalytic particle on one side, and to the InAs segment on the other side allowed electrical and optical characterization of the formed Schottky junction. From IV measurements taken at different temperatures we have deduced the Schottky barrier height and the height of the barrier formed in the graded GaInAs nanowire segment. The IV characteristics measured under laser stimulation showed that the device can be used as a unipolar photodetector with extremely small detection volume and potentially ultra fast response.

Ämnesord

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

III-V semiconductors

Schottky barriers

catalysis

epitaxial growth

gallium compounds

indium compounds

nanowires

photodetectors

semiconductor epitaxial layers

semiconductor growth

semiconductor quantum wires

Physics

Fysik

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