Assembling ferromagnetic single-electron transistors by atomic force microscopy

• We demonstrate the assembly of nanoscale ferromagnetic single-electron transistors using atomic force microscopy for imaging as well as for nanoscale manipulation. A single 30 nm Au disc, forming the central island of the transistor, is manipulated with angstrom precision into the gap between a plasma-oxidized Ni source and drain electrodes. The tunnel resistances can be tuned in real time during the device fabrication by repositioning the Au disc. Transport measurements reveal long-term stable single-electron transistor characteristics at 4.2 K. The well-controlled devices with very small central islands facilitate future in-depth studies of the interplay between Coulomb blockade, spin-dependent tunnelling and spin accumulation in ferromagnetic single-electron transistors at elevated temperatures.

Ämnesord

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology -- Nano-technology (hsv//eng)

Nyckelord

Atomic force microscopy

Coulomb blockade

Electrodes

Electron tunneling

Ferromagnetic materials

Imaging techniques

Plasmas

Drain electrodes

Plasma-oxidized

Single-electron transistors

Spin-dependent tunnelling

Transistors

Atomic force microscopy

Electrode

Semiconductor

Single electron transistor

Physics

Fysik

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