Final-state effects in photoemission from metal-semiconductor interfaces

• In this Letter we stress the importance of final-state effects in photoelectron spectroscopy. In particular, we address the problem of Schottky-barrier formation, as studied via core-level shifts in photoemission. We have calculated the shift of the core-level distribution when a semiconductor surface is covered with a metal, using a wave-vector-dependent image-screening model. We conclude that final-state effects, which are generally neglected in this context, are in fact quite important. This conclusion is supported by experimental observations reported in the literature. © 1991 The American Physical Society.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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