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Multiphysics Charac...
Multiphysics Characterization of a Novel SiC Power Module
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- Zhang, Yafan (författare)
- RISE,KTH,Elkraftteknik,Department of Netlab, RISE Acreo AB, Kista, Sweden,Acreo
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- Nee, Hans-Peter (författare)
- KTH,Elkraftteknik,The Royal Institute of Technology (KTH), School of Electrical Engineering, Stockholm, Sweden
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- Hammam, Tag (författare)
- RISE,KIMAB,Swerea KIMAB AB, Department of Joining Technology, Kista, Sweden
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- Belov, Ilja (författare)
- Jönköping University,JTH, Material och tillverkning,Jönköping University, Sweden
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- Ranstad, Per (författare)
- GE Power Sweden AB, Department of Electrical Energy Conversion, Vaxjo, Sweden
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- Bakowski, Mietek (författare)
- RISE,Acreo,Acreo AB, Department of NetLab, Kista, Sweden
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(creator_code:org_t)
- IEEE, 2019
- 2019
- Engelska.
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Ingår i: IEEE Transactions on Components, Packaging, and Manufacturing Technology. - : IEEE. - 2156-3950 .- 2156-3985 .- 1070-9886 .- 1558-3678. ; 9:3, s. 489-501
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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https://urn.kb.se/re...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- This paper proposes a novel power module concept specially designed for highly reliable silicon carbide power devices for medium- and high-power applications. The concept consists of two clamped structures: 1) a press-pack power stage accommodating silicon carbide power switch dies, and 2) perpendicularly clamped press-pack heatsinks, in which, the heatsinks are in contact with electrically insulated case plates of the power stage. The concept enables bondless package with symmetric double-sided cooling of the dies and allows for an order of magnitude higher clamping force on the heatsinks than what can be applied on the dies. The concept has been evaluated in a first demonstrator (half-bridge configuration with ten paralleled silicon carbide dies in each position). Experimental methodologies, setups, and procedures have been presented. The commutation loop inductance is approximately 9 nH at 78 kHz. The junction-to-case thermal resistance is approximately 0.028 K/W. Furthermore, a simplified 3D finite element thermomechanical model representing the center unit of the demonstrator, has been established for the purpose of future optimization. The accuracy of the simulated temperatures is within 4 % compared to the measurements. Finally, a 3D thermomechanical stress distribution map has been obtained for the simplified model of the demonstrator.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering (hsv//eng)
Nyckelord
- Computational fluid dynamics
- electromagnetic analysis
- finite element analysis
- inductance
- measurement techniques
- power electronics
- power electronics packaging
- press-pack technology
- silicon carbide
- thermal resistance
- thermomechanical simulation.
- Carbide dies
- Computational electromagnetics
- Electric power systems
- Electronics packaging
- Heat resistance
- Heat sinks
- Power semiconductor devices
- Presses (machine tools)
- Experimental methodology
- High power applications
- Press pack
- Silicon-carbide power devices
- Thermo-mechanical stress
- Thermomechanical simulation
- Finite element method
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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