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Sökning: id:"swepub:oai:DiVA.org:hj-42048" > Multiphysics Charac...

Multiphysics Characterization of a Novel SiC Power Module

Zhang, Yafan (författare)
RISE,KTH,Elkraftteknik,Department of Netlab, RISE Acreo AB, Kista, Sweden,Acreo
Nee, Hans-Peter (författare)
KTH,Elkraftteknik,The Royal Institute of Technology (KTH), School of Electrical Engineering, Stockholm, Sweden
Hammam, Tag (författare)
RISE,KIMAB,Swerea KIMAB AB, Department of Joining Technology, Kista, Sweden
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Belov, Ilja (författare)
Jönköping University,JTH, Material och tillverkning,Jönköping University, Sweden
Ranstad, Per (författare)
GE Power Sweden AB, Department of Electrical Energy Conversion, Vaxjo, Sweden
Bakowski, Mietek (författare)
RISE,Acreo,Acreo AB, Department of NetLab, Kista, Sweden
visa färre...
 (creator_code:org_t)
IEEE, 2019
2019
Engelska.
Ingår i: IEEE Transactions on Components, Packaging, and Manufacturing Technology. - : IEEE. - 2156-3950 .- 2156-3985 .- 1070-9886 .- 1558-3678. ; 9:3, s. 489-501
  • Tidskriftsartikel (refereegranskat)
Abstract Ämnesord
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  • This paper proposes a novel power module concept specially designed for highly reliable silicon carbide power devices for medium- and high-power applications. The concept consists of two clamped structures: 1) a press-pack power stage accommodating silicon carbide power switch dies, and 2) perpendicularly clamped press-pack heatsinks, in which, the heatsinks are in contact with electrically insulated case plates of the power stage. The concept enables bondless package with symmetric double-sided cooling of the dies and allows for an order of magnitude higher clamping force on the heatsinks than what can be applied on the dies. The concept has been evaluated in a first demonstrator (half-bridge configuration with ten paralleled silicon carbide dies in each position). Experimental methodologies, setups, and procedures have been presented. The commutation loop inductance is approximately 9 nH at 78 kHz. The junction-to-case thermal resistance is approximately 0.028 K/W. Furthermore, a simplified 3D finite element thermomechanical model representing the center unit of the demonstrator, has been established for the purpose of future optimization. The accuracy of the simulated temperatures is within 4 % compared to the measurements. Finally, a 3D thermomechanical stress distribution map has been obtained for the simplified model of the demonstrator. 

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
TEKNIK OCH TEKNOLOGIER  -- Materialteknik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Materials Engineering (hsv//eng)

Nyckelord

Computational fluid dynamics
electromagnetic analysis
finite element analysis
inductance
measurement techniques
power electronics
power electronics packaging
press-pack technology
silicon carbide
thermal resistance
thermomechanical simulation.
Carbide dies
Computational electromagnetics
Electric power systems
Electronics packaging
Heat resistance
Heat sinks
Power semiconductor devices
Presses (machine tools)
Experimental methodology
High power applications
Press pack
Silicon-carbide power devices
Thermo-mechanical stress
Thermomechanical simulation
Finite element method

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