CuIn1-xGaxSe2 thin-film absorber layers for solar photovoltaics fabricated by two-stage pulsed current electrodeposition

• Single phase polycrystalline Copper Indium Gallium Diselenide (CIGS) thin-films for solar photovoltaic applications were fabricated by an economical two-stage method of Pulsed Current (PC) electrodeposition. Cu, Ga and Se were first co-deposited onto a Mo foil followed by deposition of In. The as-deposited films were annealed in Argon atmosphere at 550 C for 30 min and were further characterized to study their morphology, phase constitution, and optical absorption. The results revealed that the films have a compact morphology and are comprised of a crystalline chalcopyrite single phase CIGS. The bandgap of the CIGS films was found to be 1.27 eV from absorption studies. The photoelectrochemical studies revealed the p-type nature of CIGS films with improved photocurrent over that obtained for one-stage PC electrodeposited CIGS thin-films. © 2013 Elsevier B.V.

Nyckelord

CIGS

Electrodeposition

Pulsed current

Solar energy materials

Thin films

Two-stage

Photoelectrochemicals

Polycrystalline copper

Pulsed currents

Pulsed-current electrodeposition

Solar photovoltaics

Gallium

Indium

Morphology

Selenium compounds

Semiconducting selenium compounds

Solar concentrators

Solar energy

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