Enhanced photoresponse of Cu(In,Ga)Se2/CdS heterojunction fabricated using economical non-vacuum methods

• The present study demonstrates the fabrication of a CIGS/CdS heterojunction with enhanced photoelectrochemical performance using low-cost non-vacuum methods. A simplified economical pulse electrodeposition technique, with a two-electrode system in an additive-free electrolyte, has been used for the preparation of chalcopyrite Cu(In,Ga)Se2 (CIGS) thin-films avoiding the selenization process and CdS subsequently chemical bath deposited onto these CIGS films. Photoelectrochemical (PEC) performance of bare CIGS and the CIGS/CdS heterojunction has been investigated in conventional Na2SO4 electrolyte under chopped solar simulated light. The PEC analysis reveals nearly twenty-fold increase in the photoresponse of the CIGS/CdS heterojunction compared to bare CIGS films. The CIGS/CdS junction has also been tested in a PEC cell using a novel sulphide/sulphite electrolyte for the first time and found to yield further enhancement in photocurrent density with exceptional stability. Thus, apart from fabrication of an efficient CIGS/CdS heterojunction economically, the present study proposes use of a novel electrolyte yielding superior performance and showing potential for commercialization of CIGS devices and their use in photoelectrochemical cells.[Figure not available: see fulltext.] © 2015, The Korean Institute of Metals and Materials and Springer Science+Business Media Dordrecht.

Nyckelord

CIGS/CdS heterojunction

Cu(In

Ga)Se<inf>2</inf> thin-films

photocurrent

pulsed electrodeposition

solar energy materials

Cadmium sulfide

Copper

Electrochemistry

Electrodeposition

Electrodes

Electrolytes

Fabrication

Film preparation

Films

Gallium

Heterojunctions

Photocurrents

Semiconducting selenium compounds

Solar energy

Thin films

Cu (in

ga)se

Photoelectrochemical performance

Photoelectrochemicals

Pulse electrodeposition

Solar-simulated light

Two-electrode systems

Photoelectrochemical cells

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