Carrier-mediated antiferromagnetic interlayer exchange coupling in diluted magnetic semiconductor multilayers Ga1-xMnxAs/GaAs:Be

• We report the antiferromagnetic (AFM) interlayer exchange coupling between Ga0.97Mn0.03As ferromagnetic semiconductor layers separated by Be-doped GaAs spacers. Polarized neutron reflectivity reveals a characteristic splitting at the wave vector corresponding to twice the multilayer period, indicating that the coupling between the ferromagnetic layers is AFM. When the applied field is increased to above the saturation field, this AFM coupling is suppressed. This behavior is not observed when the spacers are undoped, suggesting that the observed AFM coupling is mediated by doped charge carriers. © 2008 The American Physical Society.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Antiferromagnetic materials

Antiferromagnetism

Atomic force microscopy

Charge carriers

Civil aviation

Electric conductivity

Exchange coupling

Ferromagnetic materials

Ferromagnetism

Lanthanum compounds

Magnetic multilayers

Magnetic properties

Magnetic semiconductors

Multilayers

Semiconductor materials

Antiferromagnetic

Antiferromagnetic interlayers

Applied fields

Diluted magnetic semiconductors

Ferromagnetic layers

Ferromagnetic semiconductors

Interlayer exchange couplings

Polarized neutron reflectivities

Saturation fields

Wave vectors

Magnetic materials

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