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1.22 µm GaInNAs sat...
1.22 µm GaInNAs saturable absorber mirrors with tailored recovery time
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Puustinen, J. (författare)
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Guina, Mircea (författare)
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Korpijärvi, V. M. (författare)
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- Marcinkevicius, Saulius (författare)
- KTH,Optik
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Tukiainen, A. (författare)
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Kivistö, A. (författare)
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Pessa, Marcus (författare)
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(creator_code:org_t)
- American Institute of Physics (AIP), 2010
- 2010
- Engelska.
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Ingår i: Emerging trends and novel materials in photonics. - : American Institute of Physics (AIP). - 9780735408432 ; , s. 200-203
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The effect of in-situ N-ion irradiation on the recombination dynamics of GaInNAs/GaAs semiconductor saturable absorber mirrors has been studied. The samples were fabricated by molecular beam epitaxy using a radio frequency plasma source for nitrogen incorporation in the absorber layers as well as for the irradiation. The recombination dynamics of irradiated samples were studied by pump-probe measurements. The recombination time of the absorbers could be reduced by increasing the irradiation time. The effect of the reduced recombination time on the pulse dynamics of a mode-locked laser setup was studied with a Bi-doped fibre laser. The pulse quality was found to improve with increased irradiation time and reduced recombination time, demonstrating the potential of the in-situ irradiation method for device applications.
Ämnesord
- NATURVETENSKAP -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)
Nyckelord
- semiconductor saturable absorber mirrors
- GaInNAs
- mode locking
- fibre lasers
Publikations- och innehållstyp
- ref (ämneskategori)
- kon (ämneskategori)
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