Resistive switching in iron-oxide-filled carbon nanotubes

• Iron-oxide-filled carbon nanotubes have an intriguing charge bipolarization behaviour which allows the material to be applied in resistive memory devices. Raman analysis conducted with an electric field applied in situ shows the Kohn anomalies and a strong modification of the electronic properties related with the applied voltage intensity. As well as, the ID/IG ratio indicated the reversibility of this process. The electric characterization indicated an electronic transport governed by two main kind of charge hopping, one between the filling and nanotube and other between the nanotube shells.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

NATURVETENSKAP  -- Kemi (hsv//swe)

NATURAL SCIENCES  -- Chemical Sciences (hsv//eng)

Keyword

Lithium-Ion Battery

Augmented-Wave Method

Electrical-Properties

Oxide

Nanoparticles

Temperature

Insulators

Nanotubes

Hydrogen

Oxygen

Publication and Content Type

ref (subject category)

art (subject category)