A 4-mb toggle MRAM based on a novel bit and switching method

• 4-Mb magnetoresistive random access memory (MRAM) with a novel magnetic bit cell and toggle switching mode is presented. The circuit was designed in a five level metal, 0.18-mum complementary metal-oxide-semiconductor process with a bit cell size of 1.55 mum(2). The new bit cell uses a balanced synthetic antiferromagnetic free layer and a phased write pulse sequence to provide robust switching performance with immunity from half-select disturbs. This switching mode greatly improves the operational performance of the MRAM as compared to conventional MRAM. A detailed description of this 4-Mb toggle MRAM is presented.

Nyckelord

magnetic film memories

magnetic tunnel junction

magnetoresistive device

magnetoresistive random access memory (MRAM)

micromagnetic switching

MRAM integration

random access memories (RAMs)

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