Electronic properties of intrinsic and heavily doped AlN and GaN

• We present a theoretical study of the electronic structure, optical properties, and the effective masses of AlN and GaN based on the local density approximation (LDA) within the density functional theory (DFT), employing the first-principles, full-potential linearized augmented plane wave method. We also describe the effects on the electronic properties of the semiconductors due to heavily n- and p-type doping. The critical concentration N-c for the doping-induced metal-nonmetal (MNM) transition in both n- and p-type is calculated.

Subject headings

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Keyword

band-gap

hexagonal gan

wurtzite inn

approximation

zincblende

systems

Publication and Content Type

ref (subject category)

art (subject category)