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X-ray absorption an...
X-ray absorption and emission spectroscopy of ZnO nanoparticle and highly oriented ZnO microrod arrays
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- Persson, Clas (author)
- KTH,Tillämpad materialfysik
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Dong, C. L. (author)
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Vayssieres, L. (author)
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Augustsson, A. (author)
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Schmitt, T. (author)
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Mattesini, M. (author)
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- Ahuja, Rajeev (author)
- KTH,Materialvetenskap
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Nordgren, J. (author)
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Chang, C. L. (author)
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Ferreira da Silva, A. (author)
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Guo, J. H. (author)
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(creator_code:org_t)
- Elsevier BV, 2006
- 2006
- English.
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In: Microelectronics Journal. - : Elsevier BV. - 0026-2692. ; 37:8, s. 686-689
- Related links:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
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- The electronic structures of ZnO nanoparticles and microrod arrays are studied by 0 Is X-ray absorption spectroscopy (XAS) and O K alpha X-ray emission spectroscopy (XES). We show that the present LDA +U-SIC calculation approach is suitable to correct the LDA self-interaction error of the cation d-states. The atomic eigenstates of 3d in zinc and 2p in oxygen are energetically close, which induces strong Zn-3d-O-2p hybridization. This anomalous valence band cation-d-anion-p hybridization is affected when the localization of the Zn 3d-states is taken into account. Experimentally, the XES spectra show energy dependence in the spectral shape revealing selected excitations to the Zn 3d, 4s and 4p states, hybridized with 0 2p states. Strong anisotropic effects are observed for the highly oriented ZnO rods, but not for the isotropic spherical nanoparticles. The nanostructured ZnO has primarily bulk XAS and XES properties.
Keyword
- ZnO
- nanostructure
- X-ray
- absorption
- emission
- d-state localization
- room-temperature
- gan
- polarization
Publication and Content Type
- ref (subject category)
- art (subject category)
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- By the author/editor
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Persson, Clas
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Dong, C. L.
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Vayssieres, L.
-
Augustsson, A.
-
Schmitt, T.
-
Mattesini, M.
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show more...
-
Ahuja, Rajeev
-
Nordgren, J.
-
Chang, C. L.
-
Ferreira da Silv ...
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Guo, J. H.
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show less...
- Articles in the publication
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Microelectronics ...
- By the university
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Royal Institute of Technology