Effective reduction of trap density at the Y2O3/Ge interface by rigorous high-temperature oxygen annealing

• The impact of thermal post deposition annealing in oxygen at different temperatures on the Ge/Y2O3 interface is investigated using metal oxide semiconductor capacitors, where the yttrium oxide was grown by atomic layer deposition from tris(methylcyclopentadienyl) yttrium and H2O precursors on n-type (100)-Ge substrates. By performing in-situ X-ray photoelectron spectroscopy, the growth of GeO during the first cycles of ALD was proven and interface trap densities just below 1 x 10(11) eV(-1) cm(-2) were achieved by oxygen annealing at high temperatures (550 degrees C-600 degrees C). The good interface quality is most likely driven by the growth of interfacial GeO2 and thermally stabilizing yttrium germanate.

Ämnesord

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

Annealing

Atomic layer deposition

Charge coupled devices

Deposition

Germanium

Interfaces (materials)

MOS devices

Oxygen

Yttrium

Yttrium alloys

Yttrium oxide

Ge substrates

High temperature

Interface quality

Interface trap density

Metal-oxide-semiconductor capacitors

Oxygen annealing

Post deposition annealing

Situ x-ray photoelectron spectroscopy

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