Ostwald ripening of interstitial-type dislocation loops in 4H-silicon carbide

• The annealing behavior of interstitial-type basal plane dislocation loops in Al ion implanted 4H-SiC is investigated. It is shown that the loops undergo a dynamical ripening process. For annealing below 1700 degrees C the total area of dislocation loops increases, indicating that point defects are still available for accumulation, but for annealing times longer than 100 min at this temperature the value of the total loop area saturates. For longer annealing times, or higher temperatures, the dislocation loops are subjected to a conservative coarsening process, also known as Ostwald ripening. In this process the mean loop radius increases with increasing annealing time and temperature while the number of loops decreases. Meanwhile the summarized area of the loops stays constant. The observed ripening is suggested to occur by a mechanism, which involves coarsening by direct loop coalescence. Through this mechanism, loops on the same basal plane move towards each other until they coalesce into one, but loops on neighboring basal planes can only move until their loop edges meet (in a basal plane projection) where they remain. Climb along the c axis is not favorable as shown by experimental results and is suggested to be caused by the atomic configuration of the loop. Upon continuous annealing, this results in a situation where the loops are confined in clusters.

Nyckelord

silicon-implanted silicon

size-distribution

electron-microscopy

annealing behavior

quenched aluminium

ion-implantation

defects

evolution

energetics

growth

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