Wet and dry etching of La-0.67(Sr,Ca)(0.33)MnO3 films on Si.

• We report etching processes of epitaxial La-0.67(Sr,Ca)(0.33)MnO3 (LSCMO) colossal magnetoresistive (CMR) films grown on Bi4Ti3O12/CeO2/YSZ oxide-buffered Si using buffered HF (BHF), potassium hydroxide (KOH) and Ar ion beam etching (IBE) methods. LSCMO films demonstrate high resistivity against the KOH etchant whereas 22 nm/min etching rate was obtained in the BHF with high selectivity over photoresist and Si. Compared to 24 nm/min for Si, Ar IBE yields 16 nni/min etching rate for the LSCMO film and the oxide-buffer layers.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

colossal magnetoresistors

etching rate

Si

KOH

BHF

Ar ion beam

crystalline silicon

alkaline-solutions

Electrophysics

Elektrofysik

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)