Creation of a metallic channel at the Sn/InAs(111)B surface studied using synchrotron-radiation photoelectron spectroscopy

• The properties of a Sn-induced two-dimensional electron gas at the As-terminated InAs(111)B(1x1) surface was studied by synchrotron radiation photoelectron spectroscopy. The two-dimensional electron gas reveals itself via a narrow structure at the Fermi level, visible close to normal emission for tin coverage in the range 0.5 to 2 monolayers. Although this electron gas exhibits properties that in several respects resemble those of intrinsic charge accumulation layers on free InAs surfaces, our observations suggest that the present electron gas is much more linked to the Sn adlayer.

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2-dimensional electron-gas

accumulation layer

inas(110)

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