Improved Low-frequency Noise for 0.3nm EOT Thulium Silicate Interfacial Layer

• Low-frequency noise (LFN) of gate stacks with Tm2O3 high-k dielectric and thulium silicate (TmSiO) interfacial layer (IL) is investigated. The measured 1/f noise is compared to SiOx/HfO2 stacks with comparable IL thickness. Integration of a high-k thulium silicate IL provides a scaled EOT of 0.3nm with good mobility and interface quality, hence excellent LFN is obtained. The LFN noise for devices with TmSiO/Tm2O3 gate dielectric is reduced for nMOSFETs and comparable for pMOSFETs compared to SiOx/HfO2 devices.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Low-frequency noise

high-k dielectric

interfacial layer

Thulium silicate

MOSFET

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)