Sökning: id:"swepub:oai:DiVA.org:kth-16245" >
Electrical resistiv...
Electrical resistivity and metal-nonmetal transition in n-type doped 4H-SiC
-
- da Silva, Antonio Ferreira (författare)
- Ferreira Da Silva, A., Instituto de Fisica, Universidade Federal da Bahia, Campus Ondina, 40210-340 Salvador, BA, Brazil
-
- Pernot, Julien (författare)
- Laboratoire d'Etudes des Propriétés Electroniques des Solides (CNRS), 25 avenue des Martyrs, 38042 Grenoble Cedex 9, France, Université Joseph Fourier, BP 53, 38041 Grenoble Cedex 9, France
-
- Contreras, Sylvie (författare)
- Groupe d'Etude des Semiconducteurs, UM2-CNRS (UMR 5650), cc074, 34095 Montpellier, Cedex 5, France
-
visa fler...
-
- Sernelius, Bo (författare)
- Linköpings universitet,Tekniska högskolan,Teoretisk Fysik
-
- Persson, Clas (författare)
- KTH,Tillämpad materialfysik,Department of Materials Science and Engineering, Royal Institute of Technology, SE-100 44 Stockholm, Sweden
-
- Camassel, Jean (författare)
- Groupe d'Etude des Semiconducteurs, UM2-CNRS (UMR 5650), cc074, 34095 Montpellier, Cedex 5, France
-
visa färre...
-
Ferreira Da Silva, A, Instituto de Fisica, Universidade Federal da Bahia, Campus Ondina, 40210-340 Salvador, BA, Brazil Laboratoire d'Etudes des Propriétés Electroniques des Solides (CNRS), 25 avenue des Martyrs, 38042 Grenoble Cedex 9, France, Université Joseph Fourier, BP 53, 38041 Grenoble Cedex 9, France (creator_code:org_t)
- 2006
- 2006
- Engelska.
-
Ingår i: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 74:24
- Relaterad länk:
-
https://liu.diva-por... (primary) (Raw object)
-
visa fler...
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
https://urn.kb.se/re...
-
visa färre...
Abstract
Ämnesord
Stäng
- The electrical resistivity of 4H-SiC doped with nitrogen is analyzed in the temperature range 10-700 K for nitrogen concentrations between 3.5x10(15) and 5x10(19) cm(-3). For the highest doped samples, a good agreement is found between the experimental resistivity and the values calculated from a generalized Drude approach at similar dopant concentration and temperature. From these results, the critical concentration (N-c) of nitrogen impurities which corresponds to the metal-nonmetal transition in 4H-SiC is deduced. We find N-c similar to 10(19) cm(-3).
Nyckelord
- semiconductors
- 4h
- conductivity
- absorption
- transport
- carbide
- TECHNOLOGY
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas