Nuclear radiation detectors based on 4H-SiC p+-n junction

• Silicon carbide (SiC) radiation detectors were realized by 10B implantation into the metal contact in order to avoid implantation-related defects within the sensitive area of the 4H-SiC pn junction. No post implantation annealing was performed. Such detectors respond to thermal neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

4H-SiC

Implantation

Leakage current

Neutron converter layer

Pn diodes

Space charge region

Thermal neutrons

Ion implantation

Leakage currents

Neutron sources

Neutrons

Nuclear radiation spectroscopy

Neutron converters

P-n Diode

Space charge regions

Silicon carbide

Publikations- och innehållstyp

ref (ämneskategori)

kon (ämneskategori)