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Enhanced n-type dop...
Enhanced n-type dopant solubility in tensile-strained Si
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Bennett, N. S. (författare)
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- Radamson, Henry H. (författare)
- KTH,Mikroelektronik och Informationsteknik, IMIT
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Beer, C. S. (författare)
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Smith, A. J. (författare)
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Gwilliam, R. M. (författare)
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Cowern, N. E. B. (författare)
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Sealy, B. J. (författare)
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(creator_code:org_t)
- Elsevier BV, 2008
- 2008
- Engelska.
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Ingår i: Thin Solid Films. - : Elsevier BV. - 0040-6090 .- 1879-2731. ; 517:1, s. 331-333
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- The creation of highly conductive ultrashallow-doped regions in strained Si is a key requirement for future Si based devices. It is shown that in the presence of tensile strain, Sb becomes a contender to replace As in strain-engineered CMOS devices due to advantages in sheet resistance. While strain reduces resistance for both As and Sb; a result of enhanced electron mobility, the reduction is significantly larger for Sb due to an increase in donor activation. Differential Hall measurements suggest this is a consequence of a strain-induced Sb solubility enhancement following solid-phase epitaxial regrowth, increasing Sb solubility in Si to levels approaching 10(21) cm(-3). Experiments highlight the importance of maintaining substrate strain during thermal annealing to maintain this high Sb activation.
Nyckelord
- Antimony
- Arsenic
- Hall effect
- Stress
- Ion Implantation
- Solid phase
- epitaxy
- implanted silicon
- junctions
- sb
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
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