Characterization of 4H-SiC nMOSFETs in harsh environments, high-temperature and high gamma-ray radiation

• Characteristics of 4H-SiC nMOSFETs with arsenic-doped S/D and NbNi silicide contacts in harsh environments of high-temperature up to 450°C, and high gamma-ray radiation up to over 100 Mrad, were investigated. At high temperature, field effect mobility increased as proportional to T3/2, and threshold voltage was shifted with temperature coefficients of -4.3 mV/K and -2.6 mV/K for oxide thicknesses of 10 nm and 20 nm, respectively. After Co60 gamma-ray exposure of 113 Mrad, the field effect mobility was varied within 8% for oxide thickness of 10 nm, however for 20 nm oxide thickness, this variation was 26%. The threshold voltage shifts were within 6%.

Ämnesord

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

High gamma-ray radiation

High-temperature

SiC-nMOSFET

Characterization

Electric breakdown

MOSFET devices

Silicides

Silicon carbide

Threshold voltage

Field-effect mobilities

Gamma ray radiation

Gamma-ray exposure

Harsh environment

High temperature

NMOSFET

Temperature coefficient

Threshold voltage shifts

Gamma rays

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